GB1391522A - Vidicon camera tubes - Google Patents

Vidicon camera tubes

Info

Publication number
GB1391522A
GB1391522A GB2052472A GB2052472A GB1391522A GB 1391522 A GB1391522 A GB 1391522A GB 2052472 A GB2052472 A GB 2052472A GB 2052472 A GB2052472 A GB 2052472A GB 1391522 A GB1391522 A GB 1391522A
Authority
GB
United Kingdom
Prior art keywords
weakly
doped
semiconductor
conductive layer
gap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2052472A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1391522A publication Critical patent/GB1391522A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
    • H10D64/0124—

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
GB2052472A 1971-06-11 1972-05-03 Vidicon camera tubes Expired GB1391522A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2129176A DE2129176A1 (de) 1971-06-11 1971-06-11 Lichtempfindliches target fuer eine vidikon-bildaufnahmeroehre

Publications (1)

Publication Number Publication Date
GB1391522A true GB1391522A (en) 1975-04-23

Family

ID=5810564

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2052472A Expired GB1391522A (en) 1971-06-11 1972-05-03 Vidicon camera tubes

Country Status (4)

Country Link
DE (1) DE2129176A1 (enExample)
FR (1) FR2140554B1 (enExample)
GB (1) GB1391522A (enExample)
NL (1) NL7204263A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0789473B2 (ja) * 1986-06-04 1995-09-27 株式会社日立製作所 撮像管

Also Published As

Publication number Publication date
DE2129176A1 (de) 1973-01-04
FR2140554A1 (enExample) 1973-01-19
NL7204263A (enExample) 1972-12-13
FR2140554B1 (enExample) 1977-12-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee