GB1390367A - Gate controlled semiconductor switch - Google Patents

Gate controlled semiconductor switch

Info

Publication number
GB1390367A
GB1390367A GB1688672A GB1688672A GB1390367A GB 1390367 A GB1390367 A GB 1390367A GB 1688672 A GB1688672 A GB 1688672A GB 1688672 A GB1688672 A GB 1688672A GB 1390367 A GB1390367 A GB 1390367A
Authority
GB
United Kingdom
Prior art keywords
region
zone
type
diffused
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1688672A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1390367A publication Critical patent/GB1390367A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1012—Base regions of thyristors
    • H01L29/102—Cathode base regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

1390367 Semi-conductor devices SONY CORP 12 April 1972 [13 April 1971] 16886/72 Heading H1K A gate controlled semi-conductor switch comprises four contiguous zones 44, 34, 42 and 50 of opposite conductivity type material, wherein the junction between the first and second intermediate zones 34, 42 extends to one surface of the device as a closed line which is covered by an insulating layer 46, and the cathode region 50 is diffused into the zone 42 to form a second P-N junction such that a select central portion 40 of the zone 42 extends deeper into the underlying zone 34 and higher into the cathode region 50 than the immediately surrounding portion thereof. In addition a cathode electrode 56 is connected to the cathode region 50 such that it is in axial alignment with the select central portion 40 of the zone 42. This arrangement enables the switch to be turned off at low switching currents without the danger of the region underlying the contacts being destroyed by excessive currents. As shown, the select central portion 40 of the zone 42 may have a greater impurity concentration than the immediately adjacent surrounding portion thereof. In the manufacture of such a device a flat N-type Si substrate 34 has a P-type impurity region 40 diffused therein to a density of 10<19> atoms/c.c. through an oxide mask. The aperture in the mask is enlarged and P-type impurity to a density of 10<17> atoms/c.c. is diffused in to form region 42, which includes region 40, this region 40 simultaneously diffusing deeper into the substrate. N-type region 50, for example in the shape of a star or comb, is diffused through an oxide mask and P-type region 44 is formed in the other surface of the substrate. Electrodes 52, 54 and 58 are formed with the lead 56 bonded to cathode electrode 54 axially aligned with the P-type region 40.
GB1688672A 1971-04-13 1972-04-12 Gate controlled semiconductor switch Expired GB1390367A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2330171A JPS5242034B1 (en) 1971-04-13 1971-04-13

Publications (1)

Publication Number Publication Date
GB1390367A true GB1390367A (en) 1975-04-09

Family

ID=12106766

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1688672A Expired GB1390367A (en) 1971-04-13 1972-04-12 Gate controlled semiconductor switch

Country Status (4)

Country Link
JP (1) JPS5242034B1 (en)
CA (1) CA958817A (en)
GB (1) GB1390367A (en)
NL (1) NL7204986A (en)

Also Published As

Publication number Publication date
DE2217604A1 (en) 1972-11-16
CA958817A (en) 1974-12-03
JPS5242034B1 (en) 1977-10-21
NL7204986A (en) 1972-10-17
DE2217604B2 (en) 1976-07-22

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee