GB1387004A - Transmissive semiconductor photocathode structure - Google Patents

Transmissive semiconductor photocathode structure

Info

Publication number
GB1387004A
GB1387004A GB2202972A GB2202972A GB1387004A GB 1387004 A GB1387004 A GB 1387004A GB 2202972 A GB2202972 A GB 2202972A GB 2202972 A GB2202972 A GB 2202972A GB 1387004 A GB1387004 A GB 1387004A
Authority
GB
United Kingdom
Prior art keywords
layer
cathode
substrate
thick
compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2202972A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1387004A publication Critical patent/GB1387004A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/38—Photoelectric screens; Charge-storage screens not using charge storage, e.g. photo-emissive screen, extended cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H10P14/24—
    • H10P14/2921—
    • H10P14/2926—
    • H10P14/3211—
    • H10P14/3218—
    • H10P14/3248—
    • H10P14/3402—
    • H10P14/3421—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/007—Autodoping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/059—Germanium on silicon or Ge-Si on III-V
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/064—Gp II-VI compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/065—Gp III-V generic compounds-processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/072—Heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/119—Phosphides of gallium or indium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/12—Photocathodes-Cs coated and solar cell
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
GB2202972A 1971-05-17 1972-05-11 Transmissive semiconductor photocathode structure Expired GB1387004A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US14386271A 1971-05-17 1971-05-17

Publications (1)

Publication Number Publication Date
GB1387004A true GB1387004A (en) 1975-03-12

Family

ID=22505988

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2202972A Expired GB1387004A (en) 1971-05-17 1972-05-11 Transmissive semiconductor photocathode structure

Country Status (6)

Country Link
US (1) US3699401A (enExample)
JP (1) JPS515269B1 (enExample)
CA (1) CA966920A (enExample)
FR (1) FR2138054B1 (enExample)
GB (1) GB1387004A (enExample)
SE (1) SE377982B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170648A (en) * 1985-02-01 1986-08-06 Raytheon Co Secondary emission cathode
RU2454750C2 (ru) * 2010-08-02 2012-06-27 Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН Фотокатод

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1478453A (en) * 1971-11-29 1977-06-29 Secr Defence Photocathodes
US3981755A (en) * 1972-11-24 1976-09-21 U.S. Philips Corporation Photocathode manufacture
GB1418002A (en) * 1972-11-24 1975-12-17 Mullard Ltd Photocathode manufacture
US3914136A (en) * 1972-11-27 1975-10-21 Rca Corp Method of making a transmission photocathode device
US3985590A (en) * 1973-06-13 1976-10-12 Harris Corporation Process for forming heteroepitaxial structure
US3984857A (en) * 1973-06-13 1976-10-05 Harris Corporation Heteroepitaxial displays
US3951698A (en) * 1974-11-25 1976-04-20 The United States Of America As Represented By The Secretary Of The Army Dual use of epitaxy seed crystal as tube input window and cathode structure base
US3963538A (en) * 1974-12-17 1976-06-15 International Business Machines Corporation Two stage heteroepitaxial deposition process for GaP/Si
US3963539A (en) * 1974-12-17 1976-06-15 International Business Machines Corporation Two stage heteroepitaxial deposition process for GaAsP/Si LED's
US4000503A (en) * 1976-01-02 1976-12-28 International Audio Visual, Inc. Cold cathode for infrared image tube
US4214926A (en) * 1976-07-02 1980-07-29 Tdk Electronics Co., Ltd. Method of doping IIb or VIb group elements into a boron phosphide semiconductor
US4113531A (en) * 1976-10-26 1978-09-12 Hughes Aircraft Company Process for fabricating polycrystalline inp-cds solar cells
US4120706A (en) * 1977-09-16 1978-10-17 Harris Corporation Heteroepitaxial deposition of gap on silicon substrates
US4216037A (en) * 1978-01-06 1980-08-05 Takashi Katoda Method for manufacturing a heterojunction semiconductor device by disappearing intermediate layer
US4273596A (en) * 1978-10-03 1981-06-16 The United States Of America As Represented By The Secretary Of The Army Method of preparing a monolithic intrinsic infrared focal plane charge coupled device imager
US4213801A (en) * 1979-03-26 1980-07-22 Bell Telephone Laboratories, Incorporated Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers
US4226649A (en) * 1979-09-11 1980-10-07 The United States Of America As Represented By The Secretary Of The Navy Method for epitaxial growth of GaAs films and devices configuration independent of GaAs substrate utilizing molecular beam epitaxy and substrate removal techniques
US4719496A (en) * 1982-11-24 1988-01-12 Federico Capasso Repeated velocity overshoot semiconductor device
US4588451A (en) * 1984-04-27 1986-05-13 Advanced Energy Fund Limited Partnership Metal organic chemical vapor deposition of 111-v compounds on silicon
US4616248A (en) * 1985-05-20 1986-10-07 Honeywell Inc. UV photocathode using negative electron affinity effect in Alx Ga1 N
US4929867A (en) * 1988-06-03 1990-05-29 Varian Associates, Inc. Two stage light converting vacuum tube
CN111261489B (zh) * 2020-01-29 2022-03-25 北方夜视技术股份有限公司 光电倍增管用光电阴极、制备方法及光电倍增管

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3400015A (en) * 1963-03-22 1968-09-03 Texas Instruments Inc Energy converter
US3433684A (en) * 1966-09-13 1969-03-18 North American Rockwell Multilayer semiconductor heteroepitaxial structure
US3478213A (en) * 1967-09-05 1969-11-11 Rca Corp Photomultiplier or image amplifier with secondary emission transmission type dynodes made of semiconductive material with low work function material disposed thereon
US3537029A (en) * 1968-06-10 1970-10-27 Rca Corp Semiconductor laser producing light at two wavelengths simultaneously
US3575628A (en) * 1968-11-26 1971-04-20 Westinghouse Electric Corp Transmissive photocathode and devices utilizing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2170648A (en) * 1985-02-01 1986-08-06 Raytheon Co Secondary emission cathode
US4677342A (en) * 1985-02-01 1987-06-30 Raytheon Company Semiconductor secondary emission cathode and tube
GB2170648B (en) * 1985-02-01 1989-07-26 Raytheon Co Crossed-field tube
RU2454750C2 (ru) * 2010-08-02 2012-06-27 Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН Фотокатод

Also Published As

Publication number Publication date
FR2138054B1 (enExample) 1980-04-04
DE2224141A1 (de) 1972-11-30
CA966920A (en) 1975-04-29
FR2138054A1 (enExample) 1972-12-29
US3699401A (en) 1972-10-17
JPS515269B1 (enExample) 1976-02-18
SE377982B (enExample) 1975-08-04
DE2224141B2 (de) 1976-10-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee