GB1385634A - Gaa1as lasers - Google Patents

Gaa1as lasers

Info

Publication number
GB1385634A
GB1385634A GB3943973A GB3943973A GB1385634A GB 1385634 A GB1385634 A GB 1385634A GB 3943973 A GB3943973 A GB 3943973A GB 3943973 A GB3943973 A GB 3943973A GB 1385634 A GB1385634 A GB 1385634A
Authority
GB
United Kingdom
Prior art keywords
layer
layers
boundary
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3943973A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB3943973A priority Critical patent/GB1385634A/en
Priority to NL7410652A priority patent/NL7410652A/xx
Priority to DE2438787A priority patent/DE2438787A1/de
Priority to FR7428543A priority patent/FR2246095B3/fr
Priority to JP49095115A priority patent/JPS5051682A/ja
Publication of GB1385634A publication Critical patent/GB1385634A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB3943973A 1973-08-21 1973-08-21 Gaa1as lasers Expired GB1385634A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB3943973A GB1385634A (en) 1973-08-21 1973-08-21 Gaa1as lasers
NL7410652A NL7410652A (nl) 1973-08-21 1974-08-08 Laser van het gallium-aluminium-arseen type.
DE2438787A DE2438787A1 (de) 1973-08-21 1974-08-13 Ga al as-halbleiterlaser
FR7428543A FR2246095B3 (enrdf_load_stackoverflow) 1973-08-21 1974-08-20
JP49095115A JPS5051682A (enrdf_load_stackoverflow) 1973-08-21 1974-08-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3943973A GB1385634A (en) 1973-08-21 1973-08-21 Gaa1as lasers

Publications (1)

Publication Number Publication Date
GB1385634A true GB1385634A (en) 1975-02-26

Family

ID=10409555

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3943973A Expired GB1385634A (en) 1973-08-21 1973-08-21 Gaa1as lasers

Country Status (5)

Country Link
JP (1) JPS5051682A (enrdf_load_stackoverflow)
DE (1) DE2438787A1 (enrdf_load_stackoverflow)
FR (1) FR2246095B3 (enrdf_load_stackoverflow)
GB (1) GB1385634A (enrdf_load_stackoverflow)
NL (1) NL7410652A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4570172A (en) * 1982-12-21 1986-02-11 Thomson-Csf Light emitting diode with surface emission
US5060028A (en) * 1989-01-19 1991-10-22 Hewlett-Packard Company High band-gap opto-electronic device
US5204284A (en) * 1989-01-19 1993-04-20 Hewlett-Packard Company Method of making a high band-gap opto-electronic device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5395590A (en) * 1977-02-02 1978-08-21 Nippon Telegr & Teleph Corp <Ntt> Manufacture for semiconductor laser unit
US4438446A (en) * 1981-05-29 1984-03-20 Bell Telephone Laboratories, Incorporated Double barrier double heterostructure laser

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4570172A (en) * 1982-12-21 1986-02-11 Thomson-Csf Light emitting diode with surface emission
US5060028A (en) * 1989-01-19 1991-10-22 Hewlett-Packard Company High band-gap opto-electronic device
US5204284A (en) * 1989-01-19 1993-04-20 Hewlett-Packard Company Method of making a high band-gap opto-electronic device

Also Published As

Publication number Publication date
JPS5051682A (enrdf_load_stackoverflow) 1975-05-08
FR2246095B3 (enrdf_load_stackoverflow) 1977-06-10
FR2246095A1 (enrdf_load_stackoverflow) 1975-04-25
NL7410652A (nl) 1975-02-25
DE2438787A1 (de) 1975-03-06

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee