DE2438787A1 - Ga al as-halbleiterlaser - Google Patents
Ga al as-halbleiterlaserInfo
- Publication number
- DE2438787A1 DE2438787A1 DE2438787A DE2438787A DE2438787A1 DE 2438787 A1 DE2438787 A1 DE 2438787A1 DE 2438787 A DE2438787 A DE 2438787A DE 2438787 A DE2438787 A DE 2438787A DE 2438787 A1 DE2438787 A1 DE 2438787A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- gaalas
- layer
- aluminum concentration
- laser according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- 230000007704 transition Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000048 melt cooling Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB3943973A GB1385634A (en) | 1973-08-21 | 1973-08-21 | Gaa1as lasers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2438787A1 true DE2438787A1 (de) | 1975-03-06 |
Family
ID=10409555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2438787A Pending DE2438787A1 (de) | 1973-08-21 | 1974-08-13 | Ga al as-halbleiterlaser |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5051682A (enrdf_load_stackoverflow) |
| DE (1) | DE2438787A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2246095B3 (enrdf_load_stackoverflow) |
| GB (1) | GB1385634A (enrdf_load_stackoverflow) |
| NL (1) | NL7410652A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5395590A (en) * | 1977-02-02 | 1978-08-21 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture for semiconductor laser unit |
| US4438446A (en) * | 1981-05-29 | 1984-03-20 | Bell Telephone Laboratories, Incorporated | Double barrier double heterostructure laser |
| FR2538171B1 (fr) * | 1982-12-21 | 1986-02-28 | Thomson Csf | Diode electroluminescente a emission de surface |
| US5060028A (en) * | 1989-01-19 | 1991-10-22 | Hewlett-Packard Company | High band-gap opto-electronic device |
| US5204284A (en) * | 1989-01-19 | 1993-04-20 | Hewlett-Packard Company | Method of making a high band-gap opto-electronic device |
-
1973
- 1973-08-21 GB GB3943973A patent/GB1385634A/en not_active Expired
-
1974
- 1974-08-08 NL NL7410652A patent/NL7410652A/xx unknown
- 1974-08-13 DE DE2438787A patent/DE2438787A1/de active Pending
- 1974-08-20 FR FR7428543A patent/FR2246095B3/fr not_active Expired
- 1974-08-21 JP JP49095115A patent/JPS5051682A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5051682A (enrdf_load_stackoverflow) | 1975-05-08 |
| FR2246095B3 (enrdf_load_stackoverflow) | 1977-06-10 |
| NL7410652A (nl) | 1975-02-25 |
| FR2246095A1 (enrdf_load_stackoverflow) | 1975-04-25 |
| GB1385634A (en) | 1975-02-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |