GB1383071A - Semiconductor ceramic materials and methods of preparation thereof - Google Patents
Semiconductor ceramic materials and methods of preparation thereofInfo
- Publication number
- GB1383071A GB1383071A GB1473072A GB1473072A GB1383071A GB 1383071 A GB1383071 A GB 1383071A GB 1473072 A GB1473072 A GB 1473072A GB 1473072 A GB1473072 A GB 1473072A GB 1383071 A GB1383071 A GB 1383071A
- Authority
- GB
- United Kingdom
- Prior art keywords
- per cent
- semi
- vanadate
- cuprous
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
- H01C7/043—Oxides or oxidic compounds
- H01C7/047—Vanadium oxides or oxidic compounds, e.g. VOx
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
1383071 Semi-conductor ceramic material; vanadium compounds V N NOVIKOV T N EGOROVA and B A TALLERCHIK 29 March 1972 14730/72 Headings C1J and C1A [Also in Division H1] A semi-conductor ceramic material contains particles of vanadium tetroxide or of a solid solution containing predominantly vanadium tetroxide, sintered together by a bonding phase of cuprous vanadate (Cu 3 VO 4 ). The material may contain 5-70 wt. per cent cuprous vanadate. The semi-conductor material may be prepared by heating any of (i) 45-70 wt. per cent V 2 O 5 and 55-30 wt. per cent Cu, (ii) 40-70 wt. per cent V 2 O 5 3-45 wt. per cent V 2 O 3 and 3-40 wt. per cent Cu or (iii) 25-50 wt. per cent V 2 O 5 , 40-45 wt. per cent V 2 O 3 and 7-35 wt. per cent CuO at 600‹ to 900‹ C. In examples the powdered starting batches are ball milled, dried, briquetted and heated at 680‹ C. in a neutral medium under a vacuum of 10<SP>-2</SP> to 10<SP>-7</SP> torr.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1473072A GB1383071A (en) | 1972-03-29 | 1972-03-29 | Semiconductor ceramic materials and methods of preparation thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1473072A GB1383071A (en) | 1972-03-29 | 1972-03-29 | Semiconductor ceramic materials and methods of preparation thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1383071A true GB1383071A (en) | 1975-02-05 |
Family
ID=10046473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1473072A Expired GB1383071A (en) | 1972-03-29 | 1972-03-29 | Semiconductor ceramic materials and methods of preparation thereof |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1383071A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113161470A (en) * | 2021-04-09 | 2021-07-23 | 河南鸿昌电子有限公司 | Material for producing semiconductor refrigeration element, semiconductor crystal grain and refrigeration element |
CN113353981A (en) * | 2021-07-01 | 2021-09-07 | 陕西理工大学 | Cu3(VO4)2Preparation method of irregular nanorod |
-
1972
- 1972-03-29 GB GB1473072A patent/GB1383071A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113161470A (en) * | 2021-04-09 | 2021-07-23 | 河南鸿昌电子有限公司 | Material for producing semiconductor refrigeration element, semiconductor crystal grain and refrigeration element |
CN113353981A (en) * | 2021-07-01 | 2021-09-07 | 陕西理工大学 | Cu3(VO4)2Preparation method of irregular nanorod |
CN113353981B (en) * | 2021-07-01 | 2023-01-31 | 陕西理工大学 | Cu 3 (VO 4 ) 2 Preparation method of irregular nanorod |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PLNP | Patent lapsed through nonpayment of renewal fees |