GB1367830A - Processes and materials for making photoresists - Google Patents

Processes and materials for making photoresists

Info

Publication number
GB1367830A
GB1367830A GB5666372A GB5666372A GB1367830A GB 1367830 A GB1367830 A GB 1367830A GB 5666372 A GB5666372 A GB 5666372A GB 5666372 A GB5666372 A GB 5666372A GB 1367830 A GB1367830 A GB 1367830A
Authority
GB
United Kingdom
Prior art keywords
processes
materials
making photoresists
photoresists
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5666372A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philip A Hunt Chemical Corp
Original Assignee
Philip A Hunt Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philip A Hunt Chemical Corp filed Critical Philip A Hunt Chemical Corp
Publication of GB1367830A publication Critical patent/GB1367830A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/0025—Crosslinking or vulcanising agents; including accelerators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
GB5666372A 1972-05-23 1972-12-08 Processes and materials for making photoresists Expired GB1367830A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25609772A 1972-05-23 1972-05-23

Publications (1)

Publication Number Publication Date
GB1367830A true GB1367830A (en) 1974-09-25

Family

ID=22971094

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5666372A Expired GB1367830A (en) 1972-05-23 1972-12-08 Processes and materials for making photoresists

Country Status (4)

Country Link
BE (1) BE793490A (en)
DE (1) DE2312499A1 (en)
FR (1) FR2185631A1 (en)
GB (1) GB1367830A (en)

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141733A (en) * 1977-10-25 1979-02-27 Eastman Kodak Company Development of light-sensitive quinone diazide compositions
JPS55123614A (en) * 1979-03-16 1980-09-24 Daicel Chem Ind Ltd Photosensitive resin and positive type-photosensitive resin composition
JPS55127553A (en) * 1979-03-27 1980-10-02 Daicel Chem Ind Ltd Photosensitive composition
US4294911A (en) 1979-06-18 1981-10-13 Eastman Kodak Company Development of light-sensitive quinone diazide compositions using sulfite stabilizer
US4423138A (en) 1982-01-21 1983-12-27 Eastman Kodak Company Resist developer with ammonium or phosphonium compound and method of use to develop o-quinone diazide and novolac resist
US4517276A (en) * 1982-11-29 1985-05-14 Varian Associates, Inc. Metal-containing organic photoresists
EP0147127A2 (en) * 1983-12-30 1985-07-03 International Business Machines Corporation A composition of matter of use as a resist in lithography
US4530895A (en) * 1982-08-13 1985-07-23 Hoechst Aktiengesellschaft Aqueous-alkaline solution and process for developing positive-working reproduction layers
GB2154330A (en) * 1984-02-13 1985-09-04 British Telecomm Fabrication of semiconductor devices
US4606999A (en) * 1983-12-21 1986-08-19 Thiokol Corporation Development of positive photoresists using cyclic quaternary ammonium hydroxides
US4610953A (en) * 1983-05-28 1986-09-09 Tokyo Ohka Kogyo Co., Ltd. Aqueous developer solution for positive type photoresists with tetramethyl ammonium hydroxide and trimethyl hydroxyethyl ammonium hydroxide
US4628023A (en) * 1981-04-10 1986-12-09 Shipley Company Inc. Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
JPS62149717A (en) * 1979-03-16 1987-07-03 Daicel Chem Ind Ltd Production of photopolymer
US4686280A (en) * 1984-04-26 1987-08-11 Oki Electric Industry Co., Ltd. Positive type resist material with trimethylsilylnitrile
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
US4752552A (en) * 1983-06-29 1988-06-21 Fuji Photo Film Co., Ltd. Photosolubilizable composition
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
US4784937A (en) * 1985-08-06 1988-11-15 Tokyo Ohka Kogyo Co., Ltd. Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant
US4791046A (en) * 1984-04-26 1988-12-13 Oki Electric Industry Co., Ltd. Process for forming mask patterns of positive type resist material with trimethylsilynitrile
US4833067A (en) * 1985-08-06 1989-05-23 Tokyo Ohka Kogyo Co., Ltd. Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant
US4865945A (en) * 1986-08-13 1989-09-12 Sony Corporation Positive photoresist material with o-quinone diazide and polymer containing silicon atoms
US4914006A (en) * 1984-12-25 1990-04-03 Kabushiki Kaisha Toshiba Positive resist quaternary ammonium hydroxide containing developer with cationic and nonionic surfactant
US5543268A (en) * 1992-05-14 1996-08-06 Tokyo Ohka Kogyo Co., Ltd. Developer solution for actinic ray-sensitive resist
EP1835345A2 (en) 2006-03-14 2007-09-19 Canon Kabushiki Kaisha Photosensitive silane coupling agent, method of modifying surface, method of forming pattern, and method of fabricating device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2478641A1 (en) * 1980-03-24 1981-09-25 Rhone Poulenc Ind Sulphonyl oxy-di:oxa-1,4-oxo-aza-tri:alkoxy-silyl hydrocarbyl benzene - useful photosensitisers in photoresist compsns.
US5378502A (en) * 1992-09-09 1995-01-03 U.S. Philips Corporation Method of chemically modifying a surface in accordance with a pattern

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2407497A1 (en) * 1977-10-25 1979-05-25 Eastman Kodak Co PROCESS FOR FORMING A PHOTOGRAPHIC RESERVE, USEFUL IN PARTICULAR IN GRAPHIC ARTS AND IN MICROELECTRONICS
US4141733A (en) * 1977-10-25 1979-02-27 Eastman Kodak Company Development of light-sensitive quinone diazide compositions
JPS55123614A (en) * 1979-03-16 1980-09-24 Daicel Chem Ind Ltd Photosensitive resin and positive type-photosensitive resin composition
JPS62149717A (en) * 1979-03-16 1987-07-03 Daicel Chem Ind Ltd Production of photopolymer
JPS6260407B2 (en) * 1979-03-16 1987-12-16 Daicel Chem
JPS6223788B2 (en) * 1979-03-16 1987-05-25 Daicel Chem
JPS55127553A (en) * 1979-03-27 1980-10-02 Daicel Chem Ind Ltd Photosensitive composition
US4294911A (en) 1979-06-18 1981-10-13 Eastman Kodak Company Development of light-sensitive quinone diazide compositions using sulfite stabilizer
US4628023A (en) * 1981-04-10 1986-12-09 Shipley Company Inc. Metal ion free photoresist developer composition with lower alkyl quaternary ammonium hydrozide as alkalai agent and a quaternary ammonium compound as surfactant
US4423138A (en) 1982-01-21 1983-12-27 Eastman Kodak Company Resist developer with ammonium or phosphonium compound and method of use to develop o-quinone diazide and novolac resist
US4530895A (en) * 1982-08-13 1985-07-23 Hoechst Aktiengesellschaft Aqueous-alkaline solution and process for developing positive-working reproduction layers
US4517276A (en) * 1982-11-29 1985-05-14 Varian Associates, Inc. Metal-containing organic photoresists
US4610953A (en) * 1983-05-28 1986-09-09 Tokyo Ohka Kogyo Co., Ltd. Aqueous developer solution for positive type photoresists with tetramethyl ammonium hydroxide and trimethyl hydroxyethyl ammonium hydroxide
US4752552A (en) * 1983-06-29 1988-06-21 Fuji Photo Film Co., Ltd. Photosolubilizable composition
US4816375A (en) * 1983-06-29 1989-03-28 Fuji Photo Film Co., Ltd. Photosolubilizable composition with silyl ether or silyl ester compound
US4606999A (en) * 1983-12-21 1986-08-19 Thiokol Corporation Development of positive photoresists using cyclic quaternary ammonium hydroxides
EP0147127A2 (en) * 1983-12-30 1985-07-03 International Business Machines Corporation A composition of matter of use as a resist in lithography
EP0147127A3 (en) * 1983-12-30 1986-09-03 International Business Machines Corporation A composition of matter of use as a resist in lithography
GB2154330A (en) * 1984-02-13 1985-09-04 British Telecomm Fabrication of semiconductor devices
US4791046A (en) * 1984-04-26 1988-12-13 Oki Electric Industry Co., Ltd. Process for forming mask patterns of positive type resist material with trimethylsilynitrile
US4686280A (en) * 1984-04-26 1987-08-11 Oki Electric Industry Co., Ltd. Positive type resist material with trimethylsilylnitrile
US4914006A (en) * 1984-12-25 1990-04-03 Kabushiki Kaisha Toshiba Positive resist quaternary ammonium hydroxide containing developer with cationic and nonionic surfactant
US4782008A (en) * 1985-03-19 1988-11-01 International Business Machines Corporation Plasma-resistant polymeric material, preparation thereof, and use thereof
US4784937A (en) * 1985-08-06 1988-11-15 Tokyo Ohka Kogyo Co., Ltd. Developing solution for positive-working photoresist comprising a metal ion free organic base and an anionic surfactant
US4833067A (en) * 1985-08-06 1989-05-23 Tokyo Ohka Kogyo Co., Ltd. Developing solution for positive-working photoresist comprising tmah and non-ionic surfactant
US4737425A (en) * 1986-06-10 1988-04-12 International Business Machines Corporation Patterned resist and process
US4865945A (en) * 1986-08-13 1989-09-12 Sony Corporation Positive photoresist material with o-quinone diazide and polymer containing silicon atoms
US5543268A (en) * 1992-05-14 1996-08-06 Tokyo Ohka Kogyo Co., Ltd. Developer solution for actinic ray-sensitive resist
US6329126B1 (en) * 1992-05-14 2001-12-11 Tokyo Ohka Kogyo Co., Ltd. Developer solution for acitinic ray sensitive resist
EP1835345A2 (en) 2006-03-14 2007-09-19 Canon Kabushiki Kaisha Photosensitive silane coupling agent, method of modifying surface, method of forming pattern, and method of fabricating device
EP1835345A3 (en) * 2006-03-14 2011-05-18 Canon Kabushiki Kaisha Photosensitive silane coupling agent, method of modifying surface, method of forming pattern, and method of fabricating device

Also Published As

Publication number Publication date
FR2185631A1 (en) 1974-01-04
DE2312499A1 (en) 1973-12-06
BE793490A (en) 1973-06-29

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed