GB1365392A - Semiconductor switching device - Google Patents

Semiconductor switching device

Info

Publication number
GB1365392A
GB1365392A GB525771*[A GB525771A GB1365392A GB 1365392 A GB1365392 A GB 1365392A GB 525771 A GB525771 A GB 525771A GB 1365392 A GB1365392 A GB 1365392A
Authority
GB
United Kingdom
Prior art keywords
region
emitter
point
contact
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB525771*[A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsystems International Ltd
Original Assignee
Microsystems International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Microsystems International Ltd filed Critical Microsystems International Ltd
Priority to GB525771*[A priority Critical patent/GB1365392A/en
Priority to US00163821A priority patent/US3739236A/en
Priority to DE19722201686 priority patent/DE2201686A1/de
Priority to FR7202558A priority patent/FR2126187A1/fr
Priority to IT20188/72A priority patent/IT947276B/it
Priority to NL7202280A priority patent/NL7202280A/xx
Publication of GB1365392A publication Critical patent/GB1365392A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/676—Combinations of only thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
GB525771*[A 1971-02-23 1971-02-23 Semiconductor switching device Expired GB1365392A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB525771*[A GB1365392A (en) 1971-02-23 1971-02-23 Semiconductor switching device
US00163821A US3739236A (en) 1971-02-23 1971-07-19 Semiconductor switching device
DE19722201686 DE2201686A1 (de) 1971-02-23 1972-01-14 Halbleiterschaltdiode
FR7202558A FR2126187A1 (enExample) 1971-02-23 1972-01-26
IT20188/72A IT947276B (it) 1971-02-23 1972-02-03 Dispositivo di interruzione a semi conduttore con due terminali e quattro strati avente buone caratte ristiche funzionali
NL7202280A NL7202280A (enExample) 1971-02-23 1972-02-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB525771*[A GB1365392A (en) 1971-02-23 1971-02-23 Semiconductor switching device

Publications (1)

Publication Number Publication Date
GB1365392A true GB1365392A (en) 1974-09-04

Family

ID=9792687

Family Applications (1)

Application Number Title Priority Date Filing Date
GB525771*[A Expired GB1365392A (en) 1971-02-23 1971-02-23 Semiconductor switching device

Country Status (5)

Country Link
US (1) US3739236A (enExample)
FR (1) FR2126187A1 (enExample)
GB (1) GB1365392A (enExample)
IT (1) IT947276B (enExample)
NL (1) NL7202280A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4225874A (en) * 1978-03-09 1980-09-30 Rca Corporation Semiconductor device having integrated diode
DE3005458A1 (de) * 1980-01-16 1981-07-23 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor zum verlustarmen schalten kurzer impulse
US4595941A (en) * 1980-12-03 1986-06-17 Rca Corporation Protection circuit for integrated circuit devices
IT1212767B (it) * 1983-07-29 1989-11-30 Ates Componenti Elettron Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione.
JPH0485963A (ja) * 1990-07-30 1992-03-18 Nec Corp 半導体保護素子
US8169081B1 (en) 2007-12-27 2012-05-01 Volterra Semiconductor Corporation Conductive routings in integrated circuits using under bump metallization
CN116169183A (zh) * 2023-01-03 2023-05-26 华中科技大学 一种n型碳化硅基反向阻断双端固态闸流管及其制备方法

Also Published As

Publication number Publication date
IT947276B (it) 1973-05-21
FR2126187A1 (enExample) 1972-10-06
US3739236A (en) 1973-06-12
NL7202280A (enExample) 1972-08-25

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees