GB1364716A - Making silicon nitride - Google Patents
Making silicon nitrideInfo
- Publication number
- GB1364716A GB1364716A GB4689571A GB4689571A GB1364716A GB 1364716 A GB1364716 A GB 1364716A GB 4689571 A GB4689571 A GB 4689571A GB 4689571 A GB4689571 A GB 4689571A GB 1364716 A GB1364716 A GB 1364716A
- Authority
- GB
- United Kingdom
- Prior art keywords
- pressure
- silicon nitride
- increased
- compacts
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
- C01B21/0682—Preparation by direct nitridation of silicon
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
- C04B35/591—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by reaction sintering
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/10—Solid density
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
1364716 Silicon nitride ADVANCED MATERIALS ENG Ltd 13 Dec 1972 [8 Oct 1971] 46895/71 Heading C1A Silicon nitride is prepared by heating Si powder in a nitrogen-containing gas, e.g. N2 or NH3, at a pressure of #5 p.s.i.g. at some stage in the reaction. Si compacts may be heated at 4À4 p.s.i.g. at 1200‹ C., the pressure increased to 41À2 p.s.i.g. and the temp. increased to 1430‹ C. Alternatively the compacts may be (a) heated up to 1420‹ C. under a pressure >5 p.s.i.g. and then the pressure increased or (b) heated up to 1420‹ C. under a pressure <5 p.s.i.g. and then the pressure increased. The pressure may also be kept constant throughout the reaction. The final temp. reached may be in the range 1420- 1500‹ C. Si compacts, either isostatically pressed at 30,000 p.s.i., having a density of 1À627 g./c.c. and a surface area of 0À766 m.<2>/g. or slipcast, having a density of 1À2 g./c.c. and a surface area of 2À6 m.<2>/g., from powder having a particle size of <76 Á, may be used.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4689571A GB1364716A (en) | 1972-12-13 | 1972-12-13 | Making silicon nitride |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB4689571A GB1364716A (en) | 1972-12-13 | 1972-12-13 | Making silicon nitride |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1364716A true GB1364716A (en) | 1974-08-29 |
Family
ID=10442978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4689571A Expired GB1364716A (en) | 1972-12-13 | 1972-12-13 | Making silicon nitride |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1364716A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0377408A1 (en) * | 1989-01-04 | 1990-07-11 | Htm Ag | Method of making shaped silicon nitride articles |
-
1972
- 1972-12-13 GB GB4689571A patent/GB1364716A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0377408A1 (en) * | 1989-01-04 | 1990-07-11 | Htm Ag | Method of making shaped silicon nitride articles |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |