GB1362817A - Insulated gate field effect transistor adapted for microwave applications - Google Patents
Insulated gate field effect transistor adapted for microwave applicationsInfo
- Publication number
- GB1362817A GB1362817A GB5058371A GB5058371A GB1362817A GB 1362817 A GB1362817 A GB 1362817A GB 5058371 A GB5058371 A GB 5058371A GB 5058371 A GB5058371 A GB 5058371A GB 1362817 A GB1362817 A GB 1362817A
- Authority
- GB
- United Kingdom
- Prior art keywords
- contact
- region
- source
- deposited
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- -1 phosphorus ions Chemical class 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 230000000007 visual effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8601770A | 1970-11-02 | 1970-11-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1362817A true GB1362817A (en) | 1974-08-07 |
Family
ID=22195616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5058371A Expired GB1362817A (en) | 1970-11-02 | 1971-11-01 | Insulated gate field effect transistor adapted for microwave applications |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3700976A (enExample) |
| FR (1) | FR2112391B1 (enExample) |
| GB (1) | GB1362817A (enExample) |
| IL (1) | IL37860A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7606483A (nl) * | 1976-06-16 | 1977-12-20 | Philips Nv | Inrichting voor het mengen van signalen. |
| US4285001A (en) * | 1978-12-26 | 1981-08-18 | Board Of Trustees Of Leland Stanford Jr. University | Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material |
| US4245230A (en) * | 1979-09-28 | 1981-01-13 | Hughes Aircraft Company | Resistive Schottky barrier gate microwave switch |
| US4989061A (en) * | 1986-09-05 | 1991-01-29 | General Electric Company | Radiation hard memory cell structure with drain shielding |
| FR2973158B1 (fr) * | 2011-03-22 | 2014-02-28 | Soitec Silicon On Insulator | Procédé de fabrication d'un substrat de type semi-conducteur sur isolant pour applications radiofréquences |
| CN107204375B (zh) * | 2017-05-19 | 2019-11-26 | 深圳市华星光电技术有限公司 | 薄膜晶体管及其制作方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL282170A (enExample) * | 1961-08-17 | |||
| US3304469A (en) * | 1964-03-03 | 1967-02-14 | Rca Corp | Field effect solid state device having a partially insulated electrode |
| US3328601A (en) * | 1964-04-06 | 1967-06-27 | Northern Electric Co | Distributed field effect devices |
| US3378688A (en) * | 1965-02-24 | 1968-04-16 | Fairchild Camera Instr Co | Photosensitive diode array accessed by a metal oxide switch utilizing overlapping and traveling inversion regions |
| US3313959A (en) * | 1966-08-08 | 1967-04-11 | Hughes Aircraft Co | Thin-film resonance device |
| US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
| US3528168A (en) * | 1967-09-26 | 1970-09-15 | Texas Instruments Inc | Method of making a semiconductor device |
| US3514676A (en) * | 1967-10-25 | 1970-05-26 | North American Rockwell | Insulated gate complementary field effect transistors gate structure |
| CH477779A (de) * | 1968-12-20 | 1969-08-31 | Ibm | Verzögerungseinrichtung für elektrische Signale |
| US3562608A (en) * | 1969-03-24 | 1971-02-09 | Westinghouse Electric Corp | Variable integrated coupler |
-
1970
- 1970-11-02 US US86017A patent/US3700976A/en not_active Expired - Lifetime
-
1971
- 1971-10-06 IL IL37860A patent/IL37860A/xx unknown
- 1971-10-29 FR FR7139132A patent/FR2112391B1/fr not_active Expired
- 1971-11-01 GB GB5058371A patent/GB1362817A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2112391B1 (enExample) | 1977-08-05 |
| US3700976A (en) | 1972-10-24 |
| FR2112391A1 (enExample) | 1972-06-16 |
| IL37860A (en) | 1974-01-14 |
| IL37860A0 (en) | 1972-01-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |