GB1345995A - Diffusion of dopants into semiconductor wafers - Google Patents

Diffusion of dopants into semiconductor wafers

Info

Publication number
GB1345995A
GB1345995A GB2265272A GB2265272A GB1345995A GB 1345995 A GB1345995 A GB 1345995A GB 2265272 A GB2265272 A GB 2265272A GB 2265272 A GB2265272 A GB 2265272A GB 1345995 A GB1345995 A GB 1345995A
Authority
GB
United Kingdom
Prior art keywords
wafers
tubes
tube
dopant
compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2265272A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1345995A publication Critical patent/GB1345995A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/10—Reaction chambers; Selection of materials therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1345995 Doping semiconductor wafers SIEMENS AG 15 May 1972 [25 June 1971] 22652/72 Heading B1S Dopant is diffused into a plurality of semiconductor wafers contained in a number of relatively narrow tubes contained in a relatively large tube wherein the tubes are made of a semiconductor material the same as the wafers, by heating the tubes and wafers to the diffusion temperature and allowing the vaporized dopant to contact the wafers. As shown, several tubes-2, are arranged in tube 1, with their axis parallel to the longitudinal axis of 1. The wafers 3 packed in tubes 2 are held in position in each tube by thicker end wafers 4 and 5. All the wafers are of smaller diameter than the tubes to permit diffusion of the dopant through the tubes. The wafers 4 and 5 are prevented from falling out tubes 2 by constrictions 6. The dopant is supplied from vessel 8. Tube 1 is gas-tight sealed by plug 7 preferably made of the same semiconductor material as tube 1. In use tube 1 is evacuated and heated by filament winding 9, to the vaporization temperature of the dopant, and the temperature maintained for about 24 hours. In a modification, not shown, each of the tubes 2 are closed off at one end by means of a base 10 thereby dispensing with wafer arrangement 4. Also the tube 1 is positioned inside a quartz ampoule. The wafers doped are preferably made of silicon. Wafers made of germanium and compounds of Group III-V compounds and Groups II-VI compounds can similarly be doped.
GB2265272A 1971-06-25 1972-05-15 Diffusion of dopants into semiconductor wafers Expired GB1345995A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712131722 DE2131722A1 (en) 1971-06-25 1971-06-25 Arrangement for diffusing in dopants

Publications (1)

Publication Number Publication Date
GB1345995A true GB1345995A (en) 1974-02-06

Family

ID=5811827

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2265272A Expired GB1345995A (en) 1971-06-25 1972-05-15 Diffusion of dopants into semiconductor wafers

Country Status (10)

Country Link
US (1) US3805734A (en)
AT (1) AT336683B (en)
CA (1) CA970885A (en)
CH (1) CH570198A5 (en)
DE (1) DE2131722A1 (en)
FR (1) FR2143043B1 (en)
GB (1) GB1345995A (en)
IT (1) IT959878B (en)
NL (1) NL7204164A (en)
SE (1) SE374496B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3020264A1 (en) * 1980-05-28 1981-12-03 Siemens AG, 1000 Berlin und 8000 München SEALED, COOLED CLOSURE FOR PROCESS TUBES, ESPECIALLY IN SEMICONDUCTOR PRODUCTION
DE3782608D1 (en) * 1986-09-30 1992-12-17 Siemens Ag METHOD FOR PRODUCING A P-DOPED SEMICONDUCTOR AREA IN AN N-CONDUCTING SEMICONDUCTOR BODY.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6700080A (en) * 1966-01-03 1967-07-04
DE1521481B1 (en) * 1965-10-22 1969-12-04 Siemens Ag Arrangement for the heat treatment of disk-shaped semiconductor bodies
DE1521494B1 (en) * 1966-02-25 1970-11-26 Siemens Ag Device for diffusing foreign matter into semiconductor bodies
FR1597833A (en) * 1968-01-15 1970-06-29

Also Published As

Publication number Publication date
FR2143043B1 (en) 1978-03-03
SE374496B (en) 1975-03-10
CA970885A (en) 1975-07-08
US3805734A (en) 1974-04-23
CH570198A5 (en) 1975-12-15
IT959878B (en) 1973-11-10
FR2143043A1 (en) 1973-02-02
NL7204164A (en) 1972-12-28
AT336683B (en) 1977-05-25
ATA365772A (en) 1976-09-15
DE2131722A1 (en) 1972-12-28

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee