GB1325019A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1325019A GB1325019A GB5291670A GB5291670A GB1325019A GB 1325019 A GB1325019 A GB 1325019A GB 5291670 A GB5291670 A GB 5291670A GB 5291670 A GB5291670 A GB 5291670A GB 1325019 A GB1325019 A GB 1325019A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- highly doped
- type
- diffused
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000005192 partition Methods 0.000 abstract 4
- 230000008021 deposition Effects 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 230000004048 modification Effects 0.000 abstract 2
- 238000012986 modification Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 108091006146 Channels Proteins 0.000 abstract 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007943 implant Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
1325019 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 6 Nov 1970 [11 Nov 1969] 52916/70 Heading H1K An integrated semi-conductor circuit (Figs. 1, 2) comprises Si wafer 1 surface oxidized at 3 with N-type region 4 adjoining the surface, in which three lateral PNP transistors T 1 , T 2 , T 3 are provided with emitter and collector zones 18, 19 and a common N-type base zone which is part of region 4. A further transverse NPN transistor T 4 is formed having its collector in region 4, which comprises an epitaxial N-type Si layer on P-type substrate 5. P-type channels 6 extending through the epitaxial layer provide PN junctions 7 separating region 4 from the remainder of the body, and Al layers 8 on the oxide interconnect the transistors into the circuit of Fig. 3. To ensure equality of emitter currents in T 1 , T 2 , T 3 the emitters are D.C. connected over layers 8 to a bus 20 of Al or a highly doped diffused zone, and the active parts of the common base are held at the same potential by a highly doped N-type zone of region 4 comprising a diffused buried layer 9 and extensions 10 to the surface; surrounding transistors T 1 , T 2 , T 3 within the body which has higher conductivity than region 4; so that the common base currents flow entirely in the highly doped zone, which comprises a diffused highly doped N-type partition 12 separating the individual transistors T 1 , T 2 , T 3 , while transistor T 4 is outside the doped zone. The PN junction between the collector zone of T 3 and extension 10 is shorted at the surface by collector contact 13 in a window of the oxide layer and the collector of T 4 is connected over this contact and the doped zone to the common base of T 1 , T 2 , T 3 . In fabrication layer 9 is As diffused into P-type substrate and covered with epitaxial layer 4 on which oxide layer 3 is thermally formed. Windows are etched over photo-resist for Bo diffusion to form P channels 6, and regions 10, 12 are formed by P diffusion over photomasks. The base of T 4 and collector and emitter zones of T 1 , T 2 , T 3 are simultaneously in-diffused, followed by indiffusion of the emitter of T 4 . Contact windows are etched, and Al layers and contacts are provided by masking, etching, and vapour deposition. In a modification (Figs. 4, 5, not shown) the highly doped zone may be entirely covered by the oxide layer, with external connections of the collectors of T 3 and T 4 and an interposed aluminium interconnection overlying the oxide layer. In further modifications the highly doped zone may comprise a buried N-type layer and partitions in-diffused from the surface leaving a small gap of lower doped material therebetween (Fig. 6, not shown) or partitions out-diffused from the buried layer towards the surface from which they are separated by a small gap of lower doping (Fig. 7, not shown); two lateral transistors being provided within the highly doped zone. Dissimilar elements may be provided within the enclosure of the highly doped zone, e.g. an NPN and a PNP transistor with respective collector and base forming a common N-type zone held at uniform potential by the highly doped zone (Fig. 8, not shown); the latter being provided with a surface contact on a partition thereof. The highly doped regions may be formed by epitaxial deposition or ion implant, and other semi-conductor materials may be used, silicon nitride or alumina used for surface insulation, or the conductivity types reversed. The structure is applicable to plural PN diodes, Schottky diodes, or lateral thyristors having common zones.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6916987A NL162248C (en) | 1969-11-11 | 1969-11-11 | SEMICONDUCTOR DEVICE. |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1325019A true GB1325019A (en) | 1973-08-01 |
Family
ID=19808364
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5291670A Expired GB1325019A (en) | 1969-11-11 | 1970-11-06 | Semiconductor devices |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS5425398B1 (en) |
AT (1) | AT345344B (en) |
BE (1) | BE758719A (en) |
CH (1) | CH522296A (en) |
DE (1) | DE2051892C3 (en) |
ES (1) | ES385353A1 (en) |
FR (1) | FR2067088B1 (en) |
GB (1) | GB1325019A (en) |
NL (1) | NL162248C (en) |
SE (1) | SE352782B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4125855A (en) * | 1977-03-28 | 1978-11-14 | Bell Telephone Laboratories, Incorporated | Integrated semiconductor crosspoint arrangement |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1541490A (en) * | 1966-10-21 | 1968-10-04 | Philips Nv | Semiconductor device and method for its manufacture |
US3538397A (en) * | 1967-05-09 | 1970-11-03 | Motorola Inc | Distributed semiconductor power supplies and decoupling capacitor therefor |
FR1579658A (en) * | 1968-06-27 | 1969-08-29 |
-
0
- BE BE758719D patent/BE758719A/en unknown
-
1969
- 1969-11-11 NL NL6916987A patent/NL162248C/en not_active IP Right Cessation
-
1970
- 1970-10-22 DE DE19702051892 patent/DE2051892C3/en not_active Expired
- 1970-11-06 GB GB5291670A patent/GB1325019A/en not_active Expired
- 1970-11-06 CH CH1648970A patent/CH522296A/en not_active IP Right Cessation
- 1970-11-09 FR FR7040188A patent/FR2067088B1/fr not_active Expired
- 1970-11-09 AT AT1005270A patent/AT345344B/en not_active IP Right Cessation
- 1970-11-09 SE SE1510970A patent/SE352782B/xx unknown
- 1970-11-09 ES ES385353A patent/ES385353A1/en not_active Expired
- 1970-11-11 JP JP9901070A patent/JPS5425398B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE2051892C3 (en) | 1978-11-30 |
ATA1005270A (en) | 1978-01-15 |
DE2051892A1 (en) | 1971-05-19 |
FR2067088B1 (en) | 1976-04-16 |
SE352782B (en) | 1973-01-08 |
DE2051892B2 (en) | 1978-03-23 |
ES385353A1 (en) | 1973-04-16 |
FR2067088A1 (en) | 1971-08-13 |
AT345344B (en) | 1978-09-11 |
NL6916987A (en) | 1971-05-13 |
NL162248B (en) | 1979-11-15 |
JPS5425398B1 (en) | 1979-08-28 |
NL162248C (en) | 1980-04-15 |
BE758719A (en) | 1971-05-10 |
CH522296A (en) | 1972-06-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |