GB1322582A - Pressure- and temperature-controlled crystal growing apparatus - Google Patents

Pressure- and temperature-controlled crystal growing apparatus

Info

Publication number
GB1322582A
GB1322582A GB4705970A GB4705970A GB1322582A GB 1322582 A GB1322582 A GB 1322582A GB 4705970 A GB4705970 A GB 4705970A GB 4705970 A GB4705970 A GB 4705970A GB 1322582 A GB1322582 A GB 1322582A
Authority
GB
United Kingdom
Prior art keywords
furnace
rod
crystal
controlled
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4705970A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arthur D Little Inc
Original Assignee
Arthur D Little Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arthur D Little Inc filed Critical Arthur D Little Inc
Publication of GB1322582A publication Critical patent/GB1322582A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/106—Seed pulling including sealing means details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
GB4705970A 1970-06-15 1970-10-02 Pressure- and temperature-controlled crystal growing apparatus Expired GB1322582A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4609670A 1970-06-15 1970-06-15

Publications (1)

Publication Number Publication Date
GB1322582A true GB1322582A (en) 1973-07-04

Family

ID=21941586

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4705970A Expired GB1322582A (en) 1970-06-15 1970-10-02 Pressure- and temperature-controlled crystal growing apparatus

Country Status (4)

Country Link
US (1) US3639718A (enrdf_load_stackoverflow)
DE (1) DE2056321A1 (enrdf_load_stackoverflow)
FR (1) FR2095469A5 (enrdf_load_stackoverflow)
GB (1) GB1322582A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277441A (en) 1979-01-15 1981-07-07 Mobil Tyco Solar Energy Corporation Apparatus for monitoring crystal growth
US4662982A (en) * 1983-08-30 1987-05-05 Instytut Technologii Materialow Elektronicznych Method of producing crystals of materials for use in the electronic industry
RU2404297C1 (ru) * 2009-02-24 2010-11-20 Валерий Юрьевич Буряк Установка для выращивания монокристаллов, например, сапфиров
CN105803518A (zh) * 2016-05-31 2016-07-27 中国工程物理研究院化工材料研究所 类提拉法单晶生长装置及方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1169336A (en) * 1980-01-07 1984-06-19 Emanuel M. Sachs String stabilized ribbon growth method and apparatus
NL8102566A (nl) * 1980-06-14 1982-01-04 Leybold Heraeus Gmbh & Co Kg Inrichting voor het door middel van een opwikkelbaar trekorgaan uit een kroes trekken van een enkel kristal.
FR2546912B1 (fr) * 1983-06-06 1987-07-10 Commissariat Energie Atomique Procede et dispositif d'elaboration d'un monocristal
US5154795A (en) * 1989-06-12 1992-10-13 Mitsubishi Kasei Polytec Company System for setting analysis condition for a thermal analysis of a fluid inside an apparatus
JP2919532B2 (ja) 1990-03-02 1999-07-12 三菱化学株式会社 炉内熱流体解析の解析条件設定方式
US5277746A (en) * 1992-07-27 1994-01-11 Texas Instruments Incorporated High pressure liquid phase epitaxy reactor chamber and method with direct see through capability
US5863326A (en) * 1996-07-03 1999-01-26 Cermet, Inc. Pressurized skull crucible for crystal growth using the Czochralski technique
US5900060A (en) * 1996-07-03 1999-05-04 Cermet, Inc. Pressurized skull crucible apparatus for crystal growth and related system and methods
SE523237C2 (sv) * 1998-12-04 2004-04-06 Inline Hardening Sweden Ab Anordning för uppvärmning med hjälp av induktion
EP1147716B1 (de) 2000-04-20 2006-11-15 Hauni Maschinenbau AG Einrichtung zum Auftragen von Leim auf ein Hüllmaterial eines stabförmigen Artikels der tabakverarbeitenden Industrie
US6359267B1 (en) * 2000-05-31 2002-03-19 Ameritherm, Inc. Induction heating system
JP2002005745A (ja) * 2000-06-26 2002-01-09 Nec Corp 温度測定装置、および温度測定方法
US6724803B2 (en) * 2002-04-04 2004-04-20 Ucar Carbon Company Inc. Induction furnace for high temperature operation
KR101554394B1 (ko) * 2013-12-19 2015-09-18 주식회사 엘지실트론 잉곳의 성장공정을 관찰하기 위한 뷰 포트 및 이를 포함하는 잉곳성장장치
US11346474B2 (en) * 2018-12-27 2022-05-31 Isco Industries, Inc. Clamp assembly
US20240392468A1 (en) * 2023-05-22 2024-11-28 Siemens Medical Solutions Usa, Inc. Manufacturing chamber including quick connect fixtures

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2893847A (en) * 1954-02-23 1959-07-07 Siemens Ag Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
US3211881A (en) * 1962-08-28 1965-10-12 Westinghouse Electric Corp Apparatus for zone heating
GB1078706A (en) * 1964-10-17 1967-08-09 Ckd Praha Improvements in or relating to zone-melting
US3493770A (en) * 1966-03-01 1970-02-03 Ibm Radiation sensitive control system for crystal growing apparatus

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4277441A (en) 1979-01-15 1981-07-07 Mobil Tyco Solar Energy Corporation Apparatus for monitoring crystal growth
US4662982A (en) * 1983-08-30 1987-05-05 Instytut Technologii Materialow Elektronicznych Method of producing crystals of materials for use in the electronic industry
RU2404297C1 (ru) * 2009-02-24 2010-11-20 Валерий Юрьевич Буряк Установка для выращивания монокристаллов, например, сапфиров
CN105803518A (zh) * 2016-05-31 2016-07-27 中国工程物理研究院化工材料研究所 类提拉法单晶生长装置及方法

Also Published As

Publication number Publication date
DE2056321A1 (de) 1971-12-23
FR2095469A5 (enrdf_load_stackoverflow) 1972-02-11
US3639718A (en) 1972-02-01

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees