GB1319032A - Evaluation of semiconductors - Google Patents

Evaluation of semiconductors

Info

Publication number
GB1319032A
GB1319032A GB161971A GB161971A GB1319032A GB 1319032 A GB1319032 A GB 1319032A GB 161971 A GB161971 A GB 161971A GB 161971 A GB161971 A GB 161971A GB 1319032 A GB1319032 A GB 1319032A
Authority
GB
United Kingdom
Prior art keywords
wafer
depletion layer
impurity concentration
derived
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB161971A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB1319032A publication Critical patent/GB1319032A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2637—Circuits therefor for testing other individual devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49004—Electrical device making including measuring or testing of device or component part

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
GB161971A 1970-01-19 1971-01-13 Evaluation of semiconductors Expired GB1319032A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US377170A 1970-01-19 1970-01-19

Publications (1)

Publication Number Publication Date
GB1319032A true GB1319032A (en) 1973-05-31

Family

ID=21707508

Family Applications (1)

Application Number Title Priority Date Filing Date
GB161971A Expired GB1319032A (en) 1970-01-19 1971-01-13 Evaluation of semiconductors

Country Status (7)

Country Link
US (1) US3605015A (enExample)
JP (1) JPS509376B1 (enExample)
BE (1) BE760897A (enExample)
FR (1) FR2080914B1 (enExample)
GB (1) GB1319032A (enExample)
NL (1) NL7100701A (enExample)
SU (1) SU504516A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994014078A1 (en) * 1992-12-07 1994-06-23 Vis & Cir & C & Cir & Or Petr Method and apparatus for determining characteristic electrical properties of semi-conducting materials

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3731192A (en) * 1971-05-28 1973-05-01 Bell Telephone Labor Inc Method and apparatus for analyzing semiconductors
US4208624A (en) * 1978-08-09 1980-06-17 Bell Telephone Laboratories, Incorporated Method and apparatus for investigating dielectric semiconductor materials
JP2886176B2 (ja) * 1989-03-23 1999-04-26 三菱電機株式会社 埋め込みチャネルの物性特性測定法
HU213198B (en) * 1990-07-12 1997-03-28 Semilab Felvezetoe Fiz Lab Rt Method and apparatus for measuring concentration of charge carriers in semiconductor materials
JP2702807B2 (ja) * 1990-08-09 1998-01-26 東芝セラミックス株式会社 半導体中の深い不純物準位の測定方法及びその装置
US5521839A (en) * 1993-09-02 1996-05-28 Georgia Tech Research Corporation Deep level transient spectroscopy (DLTS) system and method
US5493231A (en) * 1994-10-07 1996-02-20 University Of North Carolina Method and apparatus for measuring the barrier height distribution in an insulated gate field effect transistor
DE10126300C1 (de) * 2001-05-30 2003-01-23 Infineon Technologies Ag Verfahren und Vorrichtung zum Messen einer Temperatur in einem integrierten Halbleiterbauelement

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2942329A (en) * 1956-09-25 1960-06-28 Ibm Semiconductor device fabrication

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994014078A1 (en) * 1992-12-07 1994-06-23 Vis & Cir & C & Cir & Or Petr Method and apparatus for determining characteristic electrical properties of semi-conducting materials
US5627479A (en) * 1992-12-07 1997-05-06 Peter Viscor Method and apparatus for determining characteristic electrical material parameters of semi-conducting materials

Also Published As

Publication number Publication date
FR2080914B1 (enExample) 1974-10-31
NL7100701A (enExample) 1971-07-21
US3605015A (en) 1971-09-14
JPS46271A (enExample) 1971-08-24
DE2102182B2 (de) 1972-11-02
FR2080914A1 (enExample) 1971-11-26
SU504516A1 (enExample) 1976-02-25
JPS509376B1 (enExample) 1975-04-12
BE760897A (fr) 1971-05-27
DE2102182A1 (de) 1971-07-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees