GB1318595A - Radiation detector - Google Patents

Radiation detector

Info

Publication number
GB1318595A
GB1318595A GB4479270A GB4479270A GB1318595A GB 1318595 A GB1318595 A GB 1318595A GB 4479270 A GB4479270 A GB 4479270A GB 4479270 A GB4479270 A GB 4479270A GB 1318595 A GB1318595 A GB 1318595A
Authority
GB
United Kingdom
Prior art keywords
crystal
pin
bore
secured
header
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4479270A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1318595A publication Critical patent/GB1318595A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

1318595 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 21 Sept 1970 [24 Sept 1969] 44792/70 Heading H1K A radiation detector comprises a central cavity around which is present a radiation sensitive junction between two regions of opposite conductivity types, which may be separated by an I-type region, the body being secured inside a sealed housing by means of a rigid pin forced into the cavity. As shown, Fig. 1, a cylindrical crystal Cl comprises coaxial layers 1, 2 of opposite conductivity types separated by an I-type region 3, and has a central through bore 4. The crystal is mounted by means of a tubular pin 5a forced into the bore 4, the pin having a disc like head 5b which is secured in a header 7 by means of an external clamping ring 8. The pin 5a may be tapered as shown or may have longitudinal slots so that it grips the wall of the bore, and may be of a metal such as Al, an insulating material such as a ceramic with metallized outer faces, or of the same material as the crystal C1. The pin 5a provides the contact to the inner layer 2 and its head 5b may be insulated from the crystal by a ring 6. An insulated lead 10 is passed through the tubular pin 5a and bore 4 and connected to the outer layer 1 at the upper face edge of the crystal. A cover 12 of metal or ceramic is placed over the crystal and secured to the header 7. In a second embodiment, Fig. 2 (not shown) the crystal is provided with a blind bore (24) into which is inserted a pin (25) the head of which is directly secured to the centre of the header (26). Contact to the outer layer (21) of the crystal is provided at its lower edge. Mention is made of Ge detectors containing Li as a compensating impurity operated in vacuo at liquid nitrogen temperatures. The cross-sectional shape of the crystal may be parallelepiped, preferably square, or trapezoidal instead of circular.
GB4479270A 1969-09-24 1970-09-21 Radiation detector Expired GB1318595A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR6932555A FR2060265A1 (en) 1969-09-24 1969-09-24

Publications (1)

Publication Number Publication Date
GB1318595A true GB1318595A (en) 1973-05-31

Family

ID=9040539

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4479270A Expired GB1318595A (en) 1969-09-24 1970-09-21 Radiation detector

Country Status (3)

Country Link
JP (1) JPS4835519B1 (en)
FR (1) FR2060265A1 (en)
GB (1) GB1318595A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2386250A (en) * 2002-03-08 2003-09-10 Denselight Semiconductors Pte Passive photodetector
EP4234241A2 (en) 2016-01-20 2023-08-30 Zephyros Inc. Thermoplastic epoxy materials with core shell phase

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5256411U (en) * 1975-10-21 1977-04-23
JPH0540411U (en) * 1991-10-31 1993-06-01 祐昌 中本 Sound absorbing material for construction

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2386250A (en) * 2002-03-08 2003-09-10 Denselight Semiconductors Pte Passive photodetector
EP4234241A2 (en) 2016-01-20 2023-08-30 Zephyros Inc. Thermoplastic epoxy materials with core shell phase

Also Published As

Publication number Publication date
DE2046364B2 (en) 1977-06-23
FR2060265A1 (en) 1971-06-18
DE2046364A1 (en) 1971-04-08
JPS4835519B1 (en) 1973-10-29

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee