GB1310487A - Bipolar transistors - Google Patents

Bipolar transistors

Info

Publication number
GB1310487A
GB1310487A GB1116571*[A GB1116571A GB1310487A GB 1310487 A GB1310487 A GB 1310487A GB 1116571 A GB1116571 A GB 1116571A GB 1310487 A GB1310487 A GB 1310487A
Authority
GB
United Kingdom
Prior art keywords
layer
diffusion
emitter
metal
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1116571*[A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM
Original Assignee
Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM filed Critical Societe Europeenne de Semi Conducteurs de Microelectronique SA SESCOSEM
Publication of GB1310487A publication Critical patent/GB1310487A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/134—Emitter regions of BJTs of lateral BJTs
    • H10P14/6314—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10W20/40—

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
GB1116571*[A 1970-04-24 1971-04-23 Bipolar transistors Expired GB1310487A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7015108A FR2085484B1 (enExample) 1970-04-24 1970-04-24

Publications (1)

Publication Number Publication Date
GB1310487A true GB1310487A (en) 1973-03-21

Family

ID=9054581

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1116571*[A Expired GB1310487A (en) 1970-04-24 1971-04-23 Bipolar transistors

Country Status (3)

Country Link
DE (1) DE2120049A1 (enExample)
FR (1) FR2085484B1 (enExample)
GB (1) GB1310487A (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1349608A (fr) * 1963-02-21 1964-01-17 Western Electric Co Décapage de l'aluminium par la technique de réserve
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts

Also Published As

Publication number Publication date
FR2085484A1 (enExample) 1971-12-24
FR2085484B1 (enExample) 1973-10-19
DE2120049A1 (de) 1971-11-11

Similar Documents

Publication Publication Date Title
GB1060303A (en) Semiconductor element and device and method of fabricating the same
GB1523246A (en) Semiconductor device manufacture
GB1270697A (en) Methods of forming semiconductor devices
GB1250509A (enExample)
GB1165575A (en) Semiconductor Device Stabilization.
MY6900313A (en) Improvements relating to transistors
GB1243355A (en) Improvements in and relating to semiconductor devices
GB1037199A (en) Improvements in or relating to transistor manufacture
GB1298059A (en) Improvements in semiconductor devices
US3615936A (en) Semiconductor device and method of making the same
GB1218676A (en) Method of manufacturing semiconductor components
GB1260977A (en) Improvements in semiconductor devices
GB1372607A (en) Semiconductor devices
GB1505103A (en) Semiconductor device having complementary transistors and method of manufacturing same
GB1452882A (en) Zener diode for integrated circuits
GB1310487A (en) Bipolar transistors
GB1412904A (en) Juncttion gated field effect transistors
JPS54105977A (en) Semiconductor device
GB1074816A (en) Improvements relating to semi-conductor devices
GB1052135A (enExample)
GB1099049A (en) A method of manufacturing transistors
GB1110321A (en) Improvements in or relating to semiconductor devices
GB1209313A (en) HIGH VOLTAGE n-p-n TRANSISTORS
GB1158585A (en) Gate Controlled Switches
GB1007936A (en) Improvements in or relating to semiconductive devices

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees