GB1305802A - - Google Patents

Info

Publication number
GB1305802A
GB1305802A GB146170A GB146170A GB1305802A GB 1305802 A GB1305802 A GB 1305802A GB 146170 A GB146170 A GB 146170A GB 146170 A GB146170 A GB 146170A GB 1305802 A GB1305802 A GB 1305802A
Authority
GB
United Kingdom
Prior art keywords
capacitor
layer
capacitors
depletion region
gates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB146170A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1305802A publication Critical patent/GB1305802A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/16—Subject matter not provided for in other groups of this subclass comprising memory cells having diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Read Only Memory (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB146170A 1969-01-21 1970-01-21 Expired GB1305802A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79256969A 1969-01-21 1969-01-21

Publications (1)

Publication Number Publication Date
GB1305802A true GB1305802A (de) 1973-02-07

Family

ID=25157354

Family Applications (2)

Application Number Title Priority Date Filing Date
GB146170A Expired GB1305802A (de) 1969-01-21 1970-01-21
GB4408872A Expired GB1305803A (de) 1969-01-21 1970-01-21

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB4408872A Expired GB1305803A (de) 1969-01-21 1970-01-21

Country Status (4)

Country Link
JP (1) JPS5139058B1 (de)
DE (1) DE2002133A1 (de)
FR (1) FR2028816B1 (de)
GB (2) GB1305802A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2331093A1 (de) * 1972-06-21 1974-01-17 Gen Electric Verfahren und vorrichtung zum abtasten von strahlung und zur lieferung einer elektrischen ausgabe

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63123675A (ja) * 1986-11-10 1988-05-27 株式会社　小山鉄工所 ペンチ，ニツパ−などの工具用握柄

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2331093A1 (de) * 1972-06-21 1974-01-17 Gen Electric Verfahren und vorrichtung zum abtasten von strahlung und zur lieferung einer elektrischen ausgabe

Also Published As

Publication number Publication date
FR2028816B1 (de) 1973-12-21
FR2028816A1 (de) 1970-10-16
JPS5139058B1 (de) 1976-10-26
GB1305803A (de) 1973-02-07
DE2002133A1 (de) 1970-07-23

Similar Documents

Publication Publication Date Title
US4250569A (en) Semiconductor memory device
US3728695A (en) Random-access floating gate mos memory array
US3984822A (en) Double polycrystalline silicon gate memory device
Frohman-Bentchkowsky FAMOS—A new semiconductor charge storage device
US3676715A (en) Semiconductor apparatus for image sensing and dynamic storage
US6925006B2 (en) Semiconductor device
US4403307A (en) Semiconductor memory device
JPS6112396B2 (de)
US4070653A (en) Random access memory cell with ion implanted resistor element
US3906296A (en) Stored charge transistor
US4377756A (en) Substrate bias circuit
US4163243A (en) One-transistor memory cell with enhanced capacitance
GB1425985A (en) Arrangements including semiconductor memory devices
JPS6214104B2 (de)
US3774087A (en) Memory elements
US4432075A (en) Electrically programmable non-volatile memory
US3916268A (en) Device for storing information and providing an electric readout from a conductor-insulator-semiconductor structure
US3859642A (en) Random access memory array of hysteresis loop capacitors
JPS55156358A (en) Semiconductor memory device
US3786441A (en) Method and device for storing information and providing an electric readout
US4302764A (en) Nondestructive read-out dynamic memory cell
US4433257A (en) Voltage supply for operating a plurality of changing transistors in a manner which reduces minority carrier disruption of adjacent memory cells
GB1105269A (en) Photosensitive semiconductor devices
EP0018764A1 (de) Halbleitervorrichtung, in der ein durch alpha-Teilchen verursachter "Soft error" verhindert ist
GB1305802A (de)

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee