GB1304591A - - Google Patents

Info

Publication number
GB1304591A
GB1304591A GB785070A GB1304591DA GB1304591A GB 1304591 A GB1304591 A GB 1304591A GB 785070 A GB785070 A GB 785070A GB 1304591D A GB1304591D A GB 1304591DA GB 1304591 A GB1304591 A GB 1304591A
Authority
GB
United Kingdom
Prior art keywords
layer
type
resistor
interconnection
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB785070A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1304591A publication Critical patent/GB1304591A/en
Expired legal-status Critical Current

Links

Classifications

    • H10W72/30—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • H10W20/40—
    • H10W90/00—
    • H10W72/073—
    • H10W72/07337—
    • H10W90/297—
    • H10W90/722—

Landscapes

  • Bipolar Transistors (AREA)
GB785070A 1970-02-18 1970-02-18 Expired GB1304591A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB785070 1970-02-18

Publications (1)

Publication Number Publication Date
GB1304591A true GB1304591A (enExample) 1973-01-24

Family

ID=9840993

Family Applications (1)

Application Number Title Priority Date Filing Date
GB785070A Expired GB1304591A (enExample) 1970-02-18 1970-02-18

Country Status (1)

Country Link
GB (1) GB1304591A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2531367A1 (de) * 1974-07-15 1976-02-05 Signetics Corp Halbleiteranordnung
GB2125620A (en) * 1982-08-19 1984-03-07 Western Electric Co Integrated circuit array
GB2152749A (en) * 1984-01-14 1985-08-07 Peter Michael Jeffery Morrish Interconnection of integrated circuitry by light
WO1996001497A1 (de) * 1994-07-05 1996-01-18 Siemens Aktiengesellschaft Verfahren zur herstellung einer dreidimensionalen schaltungsanordnung

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2531367A1 (de) * 1974-07-15 1976-02-05 Signetics Corp Halbleiteranordnung
GB2125620A (en) * 1982-08-19 1984-03-07 Western Electric Co Integrated circuit array
GB2152749A (en) * 1984-01-14 1985-08-07 Peter Michael Jeffery Morrish Interconnection of integrated circuitry by light
WO1996001497A1 (de) * 1994-07-05 1996-01-18 Siemens Aktiengesellschaft Verfahren zur herstellung einer dreidimensionalen schaltungsanordnung
US5902118A (en) * 1994-07-05 1999-05-11 Siemens Aktiengesellschaft Method for production of a three-dimensional circuit arrangement

Similar Documents

Publication Publication Date Title
US3955269A (en) Fabricating high performance integrated bipolar and complementary field effect transistors
US4160991A (en) High performance bipolar device and method for making same
US3502951A (en) Monolithic complementary semiconductor device
US3900350A (en) Method of manufacturing semiconductor devices in which silicon oxide regions inset in silicon are formed by a masking oxidation, wherein an intermediate layer of polycrystalline silicon is provided between the substrate and the oxidation mask
US3244950A (en) Reverse epitaxial transistor
US3423651A (en) Microcircuit with complementary dielectrically isolated mesa-type active elements
US4236294A (en) High performance bipolar device and method for making same
GB1144328A (en) Solid-state circuit consisting of a semiconductor body with active components, passive components, and conducting paths
US3280391A (en) High frequency transistors
US4016596A (en) High performance integrated bipolar and complementary field effect transistors
GB1058250A (en) Improvements in and relating to the manufacture of semiconductor devices
US4408387A (en) Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask
JPH0123949B2 (enExample)
GB1069755A (en) Improvements in or relating to semiconductor devices
US3506502A (en) Method of making a glass passivated mesa semiconductor device
US3390022A (en) Semiconductor device and process for producing same
GB1072778A (en) Semiconductor devices and methods of fabricating them
GB1527804A (en) Method of manufacturing integrated circuits
GB1260977A (en) Improvements in semiconductor devices
US4014718A (en) Method of making integrated circuits free from the formation of a parasitic PNPN thyristor
US3635773A (en) Method of manufacturing a semiconductor device comprising a zener diode and semiconductor device manufactured by using this method
GB1304591A (enExample)
US4109272A (en) Lateral bipolar transistor
DK157468B (da) Diode til monolitisk integreret kreds
US3436279A (en) Process of making a transistor with an inverted structure

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees