GB1302952A - - Google Patents

Info

Publication number
GB1302952A
GB1302952A GB2678570A GB2678570A GB1302952A GB 1302952 A GB1302952 A GB 1302952A GB 2678570 A GB2678570 A GB 2678570A GB 2678570 A GB2678570 A GB 2678570A GB 1302952 A GB1302952 A GB 1302952A
Authority
GB
United Kingdom
Prior art keywords
june
acts
circuit
integrated
impedance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2678570A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1302952A publication Critical patent/GB1302952A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/096—Synchronous circuits, i.e. using clock signals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
GB2678570A 1969-06-26 1970-06-03 Expired GB1302952A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US83681169A 1969-06-26 1969-06-26

Publications (1)

Publication Number Publication Date
GB1302952A true GB1302952A (enExample) 1973-01-10

Family

ID=25272800

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2678570A Expired GB1302952A (enExample) 1969-06-26 1970-06-03

Country Status (6)

Country Link
US (1) US3601630A (enExample)
CA (1) CA923199A (enExample)
DE (1) DE2031048A1 (enExample)
FR (1) FR2053933A5 (enExample)
GB (1) GB1302952A (enExample)
NL (1) NL7009127A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2154086A (en) * 1983-12-26 1985-08-29 Hitachi Ltd Semiconductor integrated circuit device with power consumption reducing arrangement

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3702943A (en) * 1971-11-05 1972-11-14 Rca Corp Field-effect transistor circuit for detecting changes in voltage level
US3798466A (en) * 1972-03-22 1974-03-19 Bell Telephone Labor Inc Circuits including combined field effect and bipolar transistors
US4192016A (en) * 1978-10-20 1980-03-04 Harris Semiconductor CMOS-bipolar EAROM
US4301383A (en) * 1979-10-05 1981-11-17 Harris Corporation Complementary IGFET buffer with improved bipolar output
US4425516A (en) 1981-05-01 1984-01-10 Zytrex Corporation Buffer circuit and integrated semiconductor circuit structure formed of bipolar and CMOS transistor elements
DE3240778A1 (de) * 1982-11-04 1984-05-10 Siemens AG, 1000 Berlin und 8000 München Elektronischer schalter
US4717847A (en) * 1985-04-29 1988-01-05 Harris Corporation TTL compatible CMOS input buffer
JPS63208324A (ja) * 1987-02-24 1988-08-29 Mitsubishi Electric Corp 半導体集積回路装置
US7048979B2 (en) 2004-06-03 2006-05-23 Kraton Polymers U.S. Llc Articles prepared from high molecular weight/low coupled block copolymers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2154086A (en) * 1983-12-26 1985-08-29 Hitachi Ltd Semiconductor integrated circuit device with power consumption reducing arrangement
US5111432A (en) * 1983-12-26 1992-05-05 Hitachi, Ltd. Semiconductor integrated circuit device with power consumption reducing arrangement

Also Published As

Publication number Publication date
FR2053933A5 (enExample) 1971-04-16
US3601630A (en) 1971-08-24
NL7009127A (enExample) 1970-12-29
DE2031048A1 (de) 1971-01-14
CA923199A (en) 1973-03-20

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee