GB1301959A - - Google Patents

Info

Publication number
GB1301959A
GB1301959A GB2473771*A GB2473771A GB1301959A GB 1301959 A GB1301959 A GB 1301959A GB 2473771 A GB2473771 A GB 2473771A GB 1301959 A GB1301959 A GB 1301959A
Authority
GB
United Kingdom
Prior art keywords
layer
gold
type
wafer
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2473771*A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1301959A publication Critical patent/GB1301959A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
GB2473771*A 1970-03-19 1971-04-19 Expired GB1301959A (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2334270 1970-03-19

Publications (1)

Publication Number Publication Date
GB1301959A true GB1301959A (cg-RX-API-DMAC7.html) 1973-01-04

Family

ID=12107903

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2473771*A Expired GB1301959A (cg-RX-API-DMAC7.html) 1970-03-19 1971-04-19

Country Status (2)

Country Link
FR (1) FR2083428B1 (cg-RX-API-DMAC7.html)
GB (1) GB1301959A (cg-RX-API-DMAC7.html)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1432255A (fr) * 1964-05-06 1966-03-18 Westinghouse Brake & Signal Dispositif de commutation à conductibilité asymétrique
GB1117359A (en) * 1965-07-22 1968-06-19 Ass Elect Ind Improvements relating to semiconductor elements
US3487276A (en) * 1966-11-15 1969-12-30 Westinghouse Electric Corp Thyristor having improved operating characteristics at high temperature

Also Published As

Publication number Publication date
FR2083428A1 (cg-RX-API-DMAC7.html) 1971-12-17
FR2083428B1 (cg-RX-API-DMAC7.html) 1976-07-23

Similar Documents

Publication Publication Date Title
US3727116A (en) Integral thyristor-rectifier device
US3573571A (en) Surface-diffused transistor with isolated field plate
US3249831A (en) Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3358197A (en) Semiconductor device
GB945249A (en) Improvements in semiconductor devices
US3280386A (en) Semiconductor a.c. switch device
US2993998A (en) Transistor combinations
US2994018A (en) Asymmetrically conductive device and method of making the same
US3476992A (en) Geometry of shorted-cathode-emitter for low and high power thyristor
US2811682A (en) Silicon power rectifier
US3513367A (en) High current gate controlled switches
US4000507A (en) Semiconductor device having two annular electrodes
US3571674A (en) Fast switching pnp transistor
US3210563A (en) Four-layer semiconductor switch with particular configuration exhibiting relatively high turn-off gain
US3078196A (en) Semiconductive switch
US3225272A (en) Semiconductor triode
US3284639A (en) Semiconductor switch device of controlled rectifier type responsive to approximately equal gate signals of either polarity
US3319139A (en) Planar transistor device having a reentrant shaped emitter region with base connection in the reentrant portion
GB1175312A (en) Semiconductor Switching Device
US3519900A (en) Temperature compensated reference diodes and methods for making same
US3324357A (en) Multi-terminal semiconductor device having active element directly mounted on terminal leads
US3694719A (en) Schottky barrier diode
US3327183A (en) Controlled rectifier having asymmetric conductivity gradients
GB1301959A (cg-RX-API-DMAC7.html)
GB1080560A (en) Semiconductor diode device

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years