GB1301388A - - Google Patents

Info

Publication number
GB1301388A
GB1301388A GB1301388DA GB1301388A GB 1301388 A GB1301388 A GB 1301388A GB 1301388D A GB1301388D A GB 1301388DA GB 1301388 A GB1301388 A GB 1301388A
Authority
GB
United Kingdom
Prior art keywords
magnetic field
diodes
diode
region
march
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19691915994 external-priority patent/DE1915994A1/en
Priority claimed from DE19691915993 external-priority patent/DE1915993A1/en
Application filed filed Critical
Publication of GB1301388A publication Critical patent/GB1301388A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R23/00Transducers other than those covered by groups H04R9/00 - H04R21/00
    • H04R23/006Transducers other than those covered by groups H04R9/00 - H04R21/00 using solid state devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Hall/Mr Elements (AREA)

Abstract

1301388 Semi-conductor devices LICENTIAPATENT - VERWALTUNGS GmbH 25 March 1970 [28 March 1969 (2)] 14545/70 Heading H1K [Also in Division H4] An electromagnetic transducer comprises a magnetic field diode and means for producing a magnetic field, the arrangement being such that a relative displacement between the diode and the magnetic field causes a change in resistance of the diode. The magnetic field diode is constructed as shown in Fig. 1 and comprises highly dioped N<SP>+</SP> and P<SP>+</SP> type regions 2, 3 on either side of a high-resistivity region 4 of N-, P-, or I type conductivity having a very long carrier lifetime within which is arranged a region 5 having a high recombination rate. A suitable magnetic field deflects carriers flowing between regions 2 and 3 into the region 5 where they recombine causing the resistance of the diode to rise. The semi-conductor material may be Si or Ge. Temperature compensation may be achieved by connecting a pair of diodes (6, 7) in series across a bias supply, Fig. 2 (not shown). The diodes are arranged so that their resistances vary in opposite senses when the magnetic field varies and the voltage across one of the diodes is applied to the input of an amplifier (8) which may be integrated in the same wafer as the diodes. Four diodes may be connected in a bridge circuit, Fig. 3 (not shown). The transducer may be used in gramophone pick-ups, Fig. 4 (not shown) and microphones, Fig. 5 (not shown).
GB1301388D 1969-03-28 1970-03-25 Expired GB1301388A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19691915994 DE1915994A1 (en) 1969-03-28 1969-03-28 microphone
DE19691915993 DE1915993A1 (en) 1969-03-28 1969-03-28 Pickup system

Publications (1)

Publication Number Publication Date
GB1301388A true GB1301388A (en) 1972-12-29

Family

ID=25757200

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1301388D Expired GB1301388A (en) 1969-03-28 1970-03-25

Country Status (2)

Country Link
FR (1) FR2035960A7 (en)
GB (1) GB1301388A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE361805B (en) * 1972-08-07 1973-11-12 Ericsson Telefon Ab L M

Also Published As

Publication number Publication date
FR2035960A7 (en) 1970-12-24

Similar Documents

Publication Publication Date Title
US2561411A (en) Semiconductor signal translating device
US2570978A (en) Semiconductor translating device
US2623105A (en) Semiconductor translating device having controlled gain
US2778956A (en) Semiconductor signal translating devices
GB721740A (en) Signal translating devices utilising semiconductive bodies
GB1468551A (en) Magnetic playback transducer
GB748558A (en) Logical circuits embodying bistable magnetic storage elements
GB1171271A (en) Semiconductor Magnetic Transducer
US2907897A (en) Pressure transducer
GB1486238A (en) Magnetoresistive arrangements
US3305790A (en) Combination hall-effect device and transistors
US2717342A (en) Semiconductor translating devices
GB1301388A (en)
GB1408985A (en) Constant current circuits
GB933211A (en) Improvements in or relating to semi-conductor devices
US2877309A (en) Hall effect amplifier
GB798671A (en) Improvements in or relating to a semi-conductor modulating device
US3660696A (en) Hall effect switching device
US2776381A (en) Multielectrode semiconductor circuit element
GB1340987A (en) Semiconductor information store
GB1367346A (en) Amplifier circuit
JPS5613774A (en) Thin film diode device and method of manufacturing same
SU1138921A1 (en) Current amplifier
GB1485778A (en) Signal clipping circuits
Ringo et al. 1f noise in uniform avalanche diodes

Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees