GB1300823A - Method of diffusing impurities into semiconductor wafers - Google Patents

Method of diffusing impurities into semiconductor wafers

Info

Publication number
GB1300823A
GB1300823A GB618770A GB618770A GB1300823A GB 1300823 A GB1300823 A GB 1300823A GB 618770 A GB618770 A GB 618770A GB 618770 A GB618770 A GB 618770A GB 1300823 A GB1300823 A GB 1300823A
Authority
GB
United Kingdom
Prior art keywords
wafers
source
receiving
spaced
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB618770A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Licentia Patent Verwaltungs GmbH
Original Assignee
Licentia Patent Verwaltungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Licentia Patent Verwaltungs GmbH filed Critical Licentia Patent Verwaltungs GmbH
Publication of GB1300823A publication Critical patent/GB1300823A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

1300823 Semi-conductor devices LICENTIA PATENT-VERWALTUNGS GmbH 9 Feb 1970 [22 Feb 1969] 6187/71 Heading H1K The dopant source in a sealed ampoule semiconductor diffusion process consists of doped semi-conductor wafers, the impurity concentration in the dopant-receiving wafers being controlled by the ratio of the surface areas of the source wafers and the receiving wafers and by the spatial arrangement of the source and receiving wafers. The total surface area of the source wafers is greater than that of the wafers to be diffused. In the arrangement shown a block of receiving wafers 6 is spaced from four blocks of source wafers 5, the latter wafers having a greater surface area than the former by a factor of between 1À3 and 5. Alternative arrangements include source and receiving wafers positioned alternately, either spaced from one another or touching, or separate spaced blocks of source wafers and receiving wafers, the former wafers all being in contact and the latter wafers being either in contact or mutually spaced. After each diffusion process a thickness of the source wafers may be removed by etching or grinding to allow them to be used again in further diffusion processes. The receiving wafers may be oxide masked. The diffusion of B into Si from B-doped Si wafers is particularly referred to, and the invention may be used to form the base region in PNP or NPN transistors.
GB618770A 1969-02-22 1970-02-09 Method of diffusing impurities into semiconductor wafers Expired GB1300823A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691909030 DE1909030B2 (en) 1969-02-22 1969-02-22 PROCESS FOR DIFFUSING FAULTS IN SEMICONDUCTOR DISCS

Publications (1)

Publication Number Publication Date
GB1300823A true GB1300823A (en) 1972-12-20

Family

ID=5726086

Family Applications (1)

Application Number Title Priority Date Filing Date
GB618770A Expired GB1300823A (en) 1969-02-22 1970-02-09 Method of diffusing impurities into semiconductor wafers

Country Status (3)

Country Link
DE (1) DE1909030B2 (en)
FR (1) FR2033374A7 (en)
GB (1) GB1300823A (en)

Also Published As

Publication number Publication date
DE1909030B2 (en) 1973-03-22
DE1909030A1 (en) 1970-09-10
FR2033374A7 (en) 1970-12-04

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees