GB1300293A - A solid-state image intensifier - Google Patents
A solid-state image intensifierInfo
- Publication number
- GB1300293A GB1300293A GB4504670A GB4504670A GB1300293A GB 1300293 A GB1300293 A GB 1300293A GB 4504670 A GB4504670 A GB 4504670A GB 4504670 A GB4504670 A GB 4504670A GB 1300293 A GB1300293 A GB 1300293A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- resistive
- resistance
- layers
- phosphor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- 239000004033 plastic Substances 0.000 abstract 3
- 229910010413 TiO 2 Inorganic materials 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000005388 borosilicate glass Substances 0.000 abstract 2
- 229910052802 copper Inorganic materials 0.000 abstract 2
- 210000003298 dental enamel Anatomy 0.000 abstract 2
- 239000003822 epoxy resin Substances 0.000 abstract 2
- 229920000647 polyepoxide Polymers 0.000 abstract 2
- -1 14À5 to 44À1% Inorganic materials 0.000 abstract 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 abstract 1
- 229910052793 cadmium Inorganic materials 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- JLATXDOZXBEBJX-UHFFFAOYSA-N cadmium(2+);selenium(2-);sulfide Chemical compound [S-2].[Se-2].[Cd+2].[Cd+2] JLATXDOZXBEBJX-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910052801 chlorine Inorganic materials 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 239000002305 electric material Substances 0.000 abstract 1
- 238000005401 electroluminescence Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 150000004771 selenides Chemical class 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 150000004763 sulfides Chemical class 0.000 abstract 1
- 150000004772 tellurides Chemical class 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
1300293 Electroluminescence MATSUSHITA ELECTRIC INDUSTRIAL CO Ltd 22 Sept 1970 [22 Sept 1969] 45046/70 Heading C4S [Also in Division C1] A solid state image intensifier comprises a layer of photoconductive material 16 and a layer of electroluminescent material 13, the impedance of the former varying with applied radiant energy, first conductive layer 17 permeable to visible light, X-rays, infra red or U.V. rays for example, transparent conductive layer 12, and D.C. and A.C. voltage sources, the EL material consisting of 45 to 70% by volume of particulate EL phosphor having an inherent non-linear resistance, the remainder being binding material, the phosphor conferring a non-linear resistive impedance to the EL layer which keeps the D.C. value across the pc layer at a constant value so that when a unidirectional field provided by said D.C. voltage source is varied to shift the characteristic curve (Fig.3, not shown) to a low input energy range, there is no appreciable change in contrast ratio and gamma value. The pc layer may be formed from sulphides, selenides or tellurides of Cd, Pb or Zn (e.g. CdS, CdSe or cadmium sulphoselenide activated by Cu, Ag, Cl, Al or Ga); the EL layer from ZnS: Cu, Al, and the binding material a vitreous material such as borosilicate glass enamel or a plastic such as epoxy resin. The borosilicate glass enamel may be SiO 2 , 14À5 to 44À1%, B 2 O 3 23À7 to 28À7%, ZnO 2À2 to 23À5%, BaO up to 14À6%, Na 2 O 10À9 to 15À4%, K 2 O up to 4À2%, TiO 2 up to 9À0%, Al 2 O 3 up to 2À7% and CaO, MgO, Pe 2 O 3 and PbO up to 1À2% and having a softening point 45‹ to 515‹ C. and sol. thermal expansion coeff. of 260 Î 10<SP>-7</SP> to 340 Î 10<SP>-7</SP>‹C. in which case a heat resisting substrate is used such as soda glass which has a higher softening point and same vol. exp., e.g. 690‹ C. and 310 Î 10<SP>-7</SP> respectively. The EL mix is applied with an organic solvent such as alcohol at 500 to 670‹ C. Layers 14, 15 of a resistive, light reflective material and a resistive, light opaque material may be included layer 14 being particles of ferro-electric material such as high specific resistance BaTiO 3 , providing increased dielectric constant, mixed with a resistive plastic or with a resistive material such as TiO 2 and a plastic such as epoxy resin, and layer 15 being a powdered resistive material such as CdS : Cl. Layers 14, 15 are 10Á and 15Á thick and prevent EL layer 13 damage from breakdown. Layers 14, 15 may compensate layer 13 resistance and impedance matching of the D.C. circuit and layers 14, 15 may be nonlinear or linear resistances and preferably of smaller resistance than the pc layer dark resistance which may be 200 to 500Á thick. Conductors 12 and 17 may be of tin oxide and layer 17 may be evaporated Al. Alternatively, parallel wires or an apertured or grid electrode may be used. Fig. 5 (not shown) illustrates a nonlinear V-I characteristic for an EL layer containing 50% EL phosphor.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7717569A JPS535512B1 (en) | 1969-09-22 | 1969-09-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1300293A true GB1300293A (en) | 1972-12-20 |
Family
ID=13626446
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4504670A Expired GB1300293A (en) | 1969-09-22 | 1970-09-22 | A solid-state image intensifier |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS535512B1 (en) |
| DE (1) | DE2046702C3 (en) |
| FR (1) | FR2062505A5 (en) |
| GB (1) | GB1300293A (en) |
| NL (1) | NL7013986A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1604206A (en) * | 1977-06-20 | 1981-12-02 | Hughes Aircraft Co | Ac driven liquid crystal light valve |
-
1969
- 1969-09-22 JP JP7717569A patent/JPS535512B1/ja active Pending
-
1970
- 1970-09-22 NL NL7013986A patent/NL7013986A/xx not_active Application Discontinuation
- 1970-09-22 GB GB4504670A patent/GB1300293A/en not_active Expired
- 1970-09-22 DE DE19702046702 patent/DE2046702C3/en not_active Expired
- 1970-09-23 FR FR7034322A patent/FR2062505A5/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2046702C3 (en) | 1975-02-20 |
| JPS535512B1 (en) | 1978-02-28 |
| NL7013986A (en) | 1971-03-24 |
| DE2046702A1 (en) | 1971-04-15 |
| FR2062505A5 (en) | 1971-06-25 |
| DE2046702B2 (en) | 1974-07-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |