GB1290926A - - Google Patents
Info
- Publication number
- GB1290926A GB1290926A GB1290926DA GB1290926A GB 1290926 A GB1290926 A GB 1290926A GB 1290926D A GB1290926D A GB 1290926DA GB 1290926 A GB1290926 A GB 1290926A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- heat sink
- metal film
- substrate
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 238000007772 electroless plating Methods 0.000 abstract 1
- 238000009713 electroplating Methods 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1290926 Semi-conductor diodes TEXAS INSTRUMENTS Inc 28 May 1970 [20 June 1969] 25718/70 Heading H1K A flipchip Schottky avalanche diode of metalsemi-conductor having a heat sink plated on the metal film comprises (Fig. 4) a N+ low resistivity high impurity silicon substrate 10 on which a monocrystalline N-silicon layer 12 is epitaxially grown with high resistivity and low impurity. A metal film rectifying layer 14 of, e.g. Ti, Wo, Mo or. Ta is formed on polished layer 12 by evaporation in vacuo or by sputtering. A metallic bonding layer 16, e.g. Ag, Au is formed by plating or vacuum evaporation on layer 14 and a heat sink layer 18 of, e.g. Cu is deposited on layer 16 by electroplating or electroless plating, and the substrate and heat sink are lapped to thickness. A thin metallic film is evaporated on the substrate and coated with a photoresist, which is selectively removed from the metal film except for the areas of contacts 24, 26, which remain after etching. A second photoresist is applied and selectively removed to define diodes 20, 22, which remain after etching the superincumbent layers down to the heat sink (Fig. 5) which is sawn into individual chips (Fig. 6, not shown) which are conventionally mounted.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US83518069A | 1969-06-20 | 1969-06-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1290926A true GB1290926A (en) | 1972-09-27 |
Family
ID=25268832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1290926D Expired GB1290926A (en) | 1969-06-20 | 1970-05-28 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4910194B1 (en) |
| DE (1) | DE2029236A1 (en) |
| FR (1) | FR2046969B1 (en) |
| GB (1) | GB1290926A (en) |
| NL (1) | NL7008946A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2151079A (en) * | 1981-11-23 | 1985-07-10 | Raytheon Co | Semiconductor device structures |
| US5144413A (en) * | 1981-11-23 | 1992-09-01 | Raytheon Company | Semiconductor structures and manufacturing methods |
| CN112635575A (en) * | 2021-01-13 | 2021-04-09 | 华东光电集成器件研究所 | High-frequency IMPATT diode mesa tube core structure and preparation method |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5531632B2 (en) * | 1972-11-17 | 1980-08-19 | ||
| JPS5532034B2 (en) * | 1972-11-20 | 1980-08-22 | ||
| CA1015069A (en) * | 1974-04-01 | 1977-08-02 | Chung K. Kim | Dynamic negative resistance diode |
| DE2444490C2 (en) * | 1974-09-18 | 1982-08-26 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Method for manufacturing a microwave diode |
| US4215156A (en) * | 1977-08-26 | 1980-07-29 | International Business Machines Corporation | Method for fabricating tantalum semiconductor contacts |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3288662A (en) * | 1963-07-18 | 1966-11-29 | Rca Corp | Method of etching to dice a semiconductor slice |
-
1970
- 1970-05-28 GB GB1290926D patent/GB1290926A/en not_active Expired
- 1970-06-13 DE DE19702029236 patent/DE2029236A1/en active Pending
- 1970-06-18 NL NL7008946A patent/NL7008946A/xx unknown
- 1970-06-19 JP JP5287070A patent/JPS4910194B1/ja active Pending
- 1970-06-19 FR FR7022778A patent/FR2046969B1/fr not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2151079A (en) * | 1981-11-23 | 1985-07-10 | Raytheon Co | Semiconductor device structures |
| US5144413A (en) * | 1981-11-23 | 1992-09-01 | Raytheon Company | Semiconductor structures and manufacturing methods |
| CN112635575A (en) * | 2021-01-13 | 2021-04-09 | 华东光电集成器件研究所 | High-frequency IMPATT diode mesa tube core structure and preparation method |
| CN112635575B (en) * | 2021-01-13 | 2023-08-22 | 华东光电集成器件研究所 | High-frequency IMPATT diode mesa tube core structure and preparation method |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2029236A1 (en) | 1971-01-07 |
| FR2046969B1 (en) | 1973-08-10 |
| NL7008946A (en) | 1970-12-22 |
| FR2046969A1 (en) | 1971-03-12 |
| JPS4910194B1 (en) | 1974-03-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |