GB1289147A - - Google Patents
Info
- Publication number
- GB1289147A GB1289147A GB1289147DA GB1289147A GB 1289147 A GB1289147 A GB 1289147A GB 1289147D A GB1289147D A GB 1289147DA GB 1289147 A GB1289147 A GB 1289147A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- layer
- resistivity
- type
- type layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 5
- 238000005530 etching Methods 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000866 electrolytic etching Methods 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Pressure Sensors (AREA)
Abstract
1289147 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 8 Oct 1969 [9 Oct 1968] 49383/69 Heading H1K A method of manufacturing semi-conductor devices comprises depositing a P-type epitaxial silicon layer on a low resistivity N-type silicon substrate in such a manner that a high resistivity N-type layer is formed therebetween, the N-type layer protecting the epitaxial layer from etching action in the subsequent selective electrolytic etching process to remove the substrate. The P- type layer may be doped with boron, have a minimum resistivity of 0.5 ohm. cm., and it may be deposited at a substrate temperature of at least 1000‹ C. The substrate may be doped with antimony and have a maximum resistivity of 0.01 ohm. cm. During the etching process, which etch may contain fluorine, a connection may be made to the substrate, but no separate voltage is applied to the epitaxial layer. Finally the high resistivity N-type layer may be removed by chemically etching. Regions of different conductivity types and/or conductivities may also be formed in the epitaxial layer prior to electrolytic etching.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6814415A NL6814415A (en) | 1968-10-09 | 1968-10-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1289147A true GB1289147A (en) | 1972-09-13 |
Family
ID=19804886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1289147D Expired GB1289147A (en) | 1968-10-09 | 1969-10-08 |
Country Status (7)
| Country | Link |
|---|---|
| BE (1) | BE739941A (en) |
| BR (1) | BR6913205D0 (en) |
| CH (1) | CH504106A (en) |
| FR (1) | FR2020229B1 (en) |
| GB (1) | GB1289147A (en) |
| NL (1) | NL6814415A (en) |
| SE (1) | SE344141B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8426915D0 (en) * | 1984-10-24 | 1984-11-28 | Marconi Instruments Ltd | Fabricating devices on semiconductor substrates |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3418226A (en) * | 1965-05-18 | 1968-12-24 | Ibm | Method of electrolytically etching a semiconductor having a single impurity gradient |
-
1968
- 1968-10-09 NL NL6814415A patent/NL6814415A/xx unknown
-
1969
- 1969-10-06 CH CH1499969A patent/CH504106A/en not_active IP Right Cessation
- 1969-10-07 SE SE1378869A patent/SE344141B/xx unknown
- 1969-10-07 BE BE739941D patent/BE739941A/xx unknown
- 1969-10-08 GB GB1289147D patent/GB1289147A/en not_active Expired
- 1969-10-08 FR FR6934386A patent/FR2020229B1/fr not_active Expired
- 1969-10-09 BR BR21320569A patent/BR6913205D0/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2020229A1 (en) | 1970-07-10 |
| DE1950533A1 (en) | 1970-04-23 |
| DE1950533B2 (en) | 1976-06-24 |
| BR6913205D0 (en) | 1973-01-11 |
| SE344141B (en) | 1972-03-27 |
| NL6814415A (en) | 1970-04-13 |
| CH504106A (en) | 1971-02-28 |
| FR2020229B1 (en) | 1974-03-15 |
| BE739941A (en) | 1970-04-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |