FR2020229A1 - - Google Patents

Info

Publication number
FR2020229A1
FR2020229A1 FR6934386A FR6934386A FR2020229A1 FR 2020229 A1 FR2020229 A1 FR 2020229A1 FR 6934386 A FR6934386 A FR 6934386A FR 6934386 A FR6934386 A FR 6934386A FR 2020229 A1 FR2020229 A1 FR 2020229A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR6934386A
Other languages
French (fr)
Other versions
FR2020229B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2020229A1 publication Critical patent/FR2020229A1/fr
Application granted granted Critical
Publication of FR2020229B1 publication Critical patent/FR2020229B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Pressure Sensors (AREA)
FR6934386A 1968-10-09 1969-10-08 Expired FR2020229B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6814415A NL6814415A (en) 1968-10-09 1968-10-09

Publications (2)

Publication Number Publication Date
FR2020229A1 true FR2020229A1 (en) 1970-07-10
FR2020229B1 FR2020229B1 (en) 1974-03-15

Family

ID=19804886

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6934386A Expired FR2020229B1 (en) 1968-10-09 1969-10-08

Country Status (7)

Country Link
BE (1) BE739941A (en)
BR (1) BR6913205D0 (en)
CH (1) CH504106A (en)
FR (1) FR2020229B1 (en)
GB (1) GB1289147A (en)
NL (1) NL6814415A (en)
SE (1) SE344141B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0181714A1 (en) * 1984-10-24 1986-05-21 Marconi Instruments Limited Method of fabrication devices on semiconductor substrates

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3418226A (en) * 1965-05-18 1968-12-24 Ibm Method of electrolytically etching a semiconductor having a single impurity gradient

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3418226A (en) * 1965-05-18 1968-12-24 Ibm Method of electrolytically etching a semiconductor having a single impurity gradient

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
REVUE AMERICAINE JOURNAL OF THE ELECTRO-CHEMICAL SOCIETY,VOL. 107, OCTOBRE 1960, "ON THE MECHANISM OF CHEMICALLY ETCHING *
REVUE AMERICAINE TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, VOL. 233, MARS 1965, "ADVANCED EPITAXIAL PROCESS FOR MONOLITHIC INTEGRATED-CIRCUIT APPLICATIONS D.M.JACKSON JR. PAGES 596-602 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0181714A1 (en) * 1984-10-24 1986-05-21 Marconi Instruments Limited Method of fabrication devices on semiconductor substrates

Also Published As

Publication number Publication date
BR6913205D0 (en) 1973-01-11
BE739941A (en) 1970-04-07
NL6814415A (en) 1970-04-13
CH504106A (en) 1971-02-28
FR2020229B1 (en) 1974-03-15
DE1950533B2 (en) 1976-06-24
GB1289147A (en) 1972-09-13
SE344141B (en) 1972-03-27
DE1950533A1 (en) 1970-04-23

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Legal Events

Date Code Title Description
ST Notification of lapse