GB1275848A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB1275848A GB1275848A GB4550870A GB4550870A GB1275848A GB 1275848 A GB1275848 A GB 1275848A GB 4550870 A GB4550870 A GB 4550870A GB 4550870 A GB4550870 A GB 4550870A GB 1275848 A GB1275848 A GB 1275848A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- regions
- normal
- type
- lateral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000004020 conductor Substances 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0821—Combination of lateral and vertical transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
Abstract
1275848 Semi-conductor devices ITT INDUSTRIES Inc 24 Sept 1970 [29 Sept 1969] 45508/70 Heading H1K In order to provide a transistor structure with a particularly flat large-signal current gain characteristic for a wide range of collector current values a lateral bipolar transistor is provided in the same semi-conductor body as, and in parallel with, a normal bipolar transistor in which base current flows perpendicularly to the major device surface. The normal transistor may be hometaxial or planar, having, in the latter case, diffused N-type and P-type emitter and base regions 3, 1 in an N-type Si body 4<SP>1</SP>, which may be homogeneous or may include an epitaxial layer. The lateral transistor then comprises an emitter region 3 and collector region 4, the three regions thereof being continuous with those of the normal transistor. The regions of the lateral transistor surround those of the normal transistor, the emitter region of which may be diffused through a meandering or combshaped masking layer 2<SP>1</SP>. Corresponding regions of the two transistors may, instead of being continuous with one another, be connected by conductors.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691949062 DE1949062C3 (en) | 1969-09-29 | Transistor arrangement and method for their manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1275848A true GB1275848A (en) | 1972-05-24 |
Family
ID=5746784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB4550870A Expired GB1275848A (en) | 1969-09-29 | 1970-09-24 | Semiconductor device |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR2063056B1 (en) |
GB (1) | GB1275848A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1482357A1 (en) * | 2003-05-30 | 2004-12-01 | Fuji Photo Film Co., Ltd. | Circuit for a flash device |
-
1970
- 1970-09-24 GB GB4550870A patent/GB1275848A/en not_active Expired
- 1970-09-29 FR FR7035116A patent/FR2063056B1/fr not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1482357A1 (en) * | 2003-05-30 | 2004-12-01 | Fuji Photo Film Co., Ltd. | Circuit for a flash device |
Also Published As
Publication number | Publication date |
---|---|
DE1949062B2 (en) | 1975-11-13 |
FR2063056B1 (en) | 1977-01-28 |
DE1949062A1 (en) | 1971-04-08 |
FR2063056A1 (en) | 1971-07-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
435 | Patent endorsed 'licences of right' on the date specified (sect. 35/1949) | ||
PCNP | Patent ceased through non-payment of renewal fee |