GB1268905A - Improvements in or relating to integrated circuit devices - Google Patents

Improvements in or relating to integrated circuit devices

Info

Publication number
GB1268905A
GB1268905A GB3453268A GB3453268A GB1268905A GB 1268905 A GB1268905 A GB 1268905A GB 3453268 A GB3453268 A GB 3453268A GB 3453268 A GB3453268 A GB 3453268A GB 1268905 A GB1268905 A GB 1268905A
Authority
GB
United Kingdom
Prior art keywords
diode
substrate
photo
july
shift register
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3453268A
Inventor
Peter Ormonde Styan
Peter John Wellesley Noble
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB3453268A priority Critical patent/GB1268905A/en
Priority to FR6924473A priority patent/FR2013269A1/fr
Priority to DE19691936621 priority patent/DE1936621A1/en
Publication of GB1268905A publication Critical patent/GB1268905A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

1,268,905. Semi-conductor circuits. PLESSEY CO. Ltd. 16 July, 1969 [19 July, 1968], No. 34532/68. Heading H3T. [Also in Divisions G1 and H1] An integrated circuit photo-diode array for character recognition purposes comprises a plurality of circuit elements n, n-1, Fig. 3, having a photo-diode D with an inherent capacitance C D which is charged through metaloxide silicon transistor M1 by a sampling pulse Pn on line 21. During the subsequent scan period light incident on the diode causes it to discharge its capacitance at a rate determined by the instantaneous illumination. Since the gate of M2 is connected to the diode, the output current of M2 which flows in response to a sampling pulse on M3 is a function of the integrated light flux during the preceding scan period. The sampling pulses are obtained from a shift register, on the same substrate, Fig. 4, having two sets of clock pulses of 0 to - 30 v. in anti-phase. A circuit shown in Fig. 7 compensates for thermal effects on the substrate of the photo-diode array and shift register by monitoring the temperature of the substrate by M10 formed on the substrate and suitably adjusting the supply potential to the photodiode circuits.
GB3453268A 1968-07-19 1968-07-19 Improvements in or relating to integrated circuit devices Expired GB1268905A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB3453268A GB1268905A (en) 1968-07-19 1968-07-19 Improvements in or relating to integrated circuit devices
FR6924473A FR2013269A1 (en) 1968-07-19 1969-07-18
DE19691936621 DE1936621A1 (en) 1968-07-19 1969-07-18 Process for manufacturing an integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3453268A GB1268905A (en) 1968-07-19 1968-07-19 Improvements in or relating to integrated circuit devices

Publications (1)

Publication Number Publication Date
GB1268905A true GB1268905A (en) 1972-03-29

Family

ID=10366804

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3453268A Expired GB1268905A (en) 1968-07-19 1968-07-19 Improvements in or relating to integrated circuit devices

Country Status (3)

Country Link
DE (1) DE1936621A1 (en)
FR (1) FR2013269A1 (en)
GB (1) GB1268905A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3204066A1 (en) * 1981-02-27 1982-09-16 Dainippon Screen Manufacturing Co., Ltd., Kyoto FILM DARK DETECTOR

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3204066A1 (en) * 1981-02-27 1982-09-16 Dainippon Screen Manufacturing Co., Ltd., Kyoto FILM DARK DETECTOR

Also Published As

Publication number Publication date
DE1936621A1 (en) 1970-01-22
FR2013269A1 (en) 1970-03-27

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