GB1265269A - - Google Patents

Info

Publication number
GB1265269A
GB1265269A GB5726770A GB1265269DA GB1265269A GB 1265269 A GB1265269 A GB 1265269A GB 5726770 A GB5726770 A GB 5726770A GB 1265269D A GB1265269D A GB 1265269DA GB 1265269 A GB1265269 A GB 1265269A
Authority
GB
United Kingdom
Prior art keywords
region
layer
type
diffusion
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5726770A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1265269A publication Critical patent/GB1265269A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/031—Manufacture or treatment of isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/30—Isolation regions comprising PN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon

Landscapes

  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
GB5726770A 1970-12-02 1970-12-02 Expired GB1265269A (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5726770 1970-12-02

Publications (1)

Publication Number Publication Date
GB1265269A true GB1265269A (https=) 1972-03-01

Family

ID=10478787

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5726770A Expired GB1265269A (https=) 1970-12-02 1970-12-02

Country Status (1)

Country Link
GB (1) GB1265269A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0025658A3 (en) * 1979-09-18 1983-04-20 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Improvements in or relating to charge storage and transfer devices and their fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0025658A3 (en) * 1979-09-18 1983-04-20 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Improvements in or relating to charge storage and transfer devices and their fabrication

Similar Documents

Publication Publication Date Title
US3524113A (en) Complementary pnp-npn transistors and fabrication method therefor
GB1059739A (en) Semiconductor element and device and method fabricating the same
GB1198569A (en) Semiconductor Junction Device.
GB1050478A (https=)
GB1484834A (en) Manufacture of complementary metal oxide semiconductor devices
GB1270697A (en) Methods of forming semiconductor devices
GB972511A (en) Semiconductor devices and methods of making them
GB1339095A (en) Fabrication of monolithic integrated circuits
GB1332931A (en) Methods of manufacturing a semiconductor device
GB1364676A (en) Semiconductor integrated device
US3390022A (en) Semiconductor device and process for producing same
US3817794A (en) Method for making high-gain transistors
GB1260977A (en) Improvements in semiconductor devices
US3760239A (en) Coaxial inverted geometry transistor having buried emitter
GB1505103A (en) Semiconductor device having complementary transistors and method of manufacturing same
GB1265269A (https=)
GB1368190A (en) Monolithic integrated circuit
GB1361303A (en) Manufacture of semiconductor devices
GB1477514A (en) Semiconductor devices
GB1194752A (en) Transistor
GB1285917A (en) Semiconductor device fabrication
JPS59169177A (ja) 半導体装置
GB1363515A (en) Manufacture of semiconductor devices
GB1372779A (en) Integrated circuits
GB1224802A (en) Semiconductor device and a method of manufacturing the same

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees