GB1259923A - Method of treating semiconductor devices - Google Patents

Method of treating semiconductor devices

Info

Publication number
GB1259923A
GB1259923A GB4422/70A GB442270A GB1259923A GB 1259923 A GB1259923 A GB 1259923A GB 4422/70 A GB4422/70 A GB 4422/70A GB 442270 A GB442270 A GB 442270A GB 1259923 A GB1259923 A GB 1259923A
Authority
GB
United Kingdom
Prior art keywords
radiation
loading
semi
dielectric layer
irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4422/70A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19691904763 external-priority patent/DE1904763C/de
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Publication of GB1259923A publication Critical patent/GB1259923A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/165—Transmutation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/906—Dram with capacitor electrodes used for accessing, e.g. bit line is capacitor plate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/953—Making radiation resistant device

Landscapes

  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Insulating Films (AREA)
GB4422/70A 1969-01-31 1970-01-29 Method of treating semiconductor devices Expired GB1259923A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19691904763 DE1904763C (de) 1969-01-31 Verfahren zum Behandeln von Siliziumtransistoren mit Siliziumoxid-Deckschichten

Publications (1)

Publication Number Publication Date
GB1259923A true GB1259923A (en) 1972-01-12

Family

ID=5723928

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4422/70A Expired GB1259923A (en) 1969-01-31 1970-01-29 Method of treating semiconductor devices

Country Status (4)

Country Link
US (1) US3691376A (https=)
FR (1) FR2029814B1 (https=)
GB (1) GB1259923A (https=)
NL (1) NL6919560A (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5213716B2 (https=) * 1971-12-22 1977-04-16
US3852612A (en) * 1972-08-31 1974-12-03 Westinghouse Electric Corp Selective low level irradiation to improve blocking voltage yield of junctioned semiconductors
US3755671A (en) * 1972-09-29 1973-08-28 Rca Corp Method of providing a semiconductor body with piezoelectric properties
US4014772A (en) * 1975-04-24 1977-03-29 Rca Corporation Method of radiation hardening semiconductor devices
US4238694A (en) * 1977-05-23 1980-12-09 Bell Telephone Laboratories, Incorporated Healing radiation defects in semiconductors
DE2755418A1 (de) * 1977-12-13 1979-06-21 Bosch Gmbh Robert Verfahren zur herstellung eines halbleiter-bauelements
US4184896A (en) * 1978-06-06 1980-01-22 The United States Of America As Represented By The Secretary Of The Air Force Surface barrier tailoring of semiconductor devices utilizing scanning electron microscope produced ionizing radiation
US4318750A (en) * 1979-12-28 1982-03-09 Westinghouse Electric Corp. Method for radiation hardening semiconductor devices and integrated circuits to latch-up effects
US4663526A (en) * 1984-12-26 1987-05-05 Emil Kamieniecki Nondestructive readout of a latent electrostatic image formed on an insulating material
US4833324A (en) * 1985-04-03 1989-05-23 Optical Diagnostic Systems, Inc. Nondestructive readout of a latent electrostatic image formed on an insulating material
FR2663160B1 (fr) * 1990-06-12 1997-01-10 Commissariat Energie Atomique Procede pour la prolongation de la duree de fonctionnement d'un circuit a composants mos soumis a un rayonnement "gamma".
US5516731A (en) * 1994-06-02 1996-05-14 Lsi Logic Corporation High-temperature bias anneal of integrated circuits for improved radiation hardness and hot electron resistance
US6958621B2 (en) * 2003-12-02 2005-10-25 International Business Machines Corporation Method and circuit for element wearout recovery
US9061143B2 (en) * 2011-10-14 2015-06-23 Sumitomo Heavy Industries, Ltd. Charged particle beam irradiation system and charged particle beam irradiation planning method

Also Published As

Publication number Publication date
DE1904763A1 (de) 1970-09-24
DE1904763B2 (de) 1972-08-17
FR2029814B1 (https=) 1974-10-11
NL6919560A (https=) 1970-08-04
US3691376A (en) 1972-09-12
FR2029814A1 (https=) 1970-10-23

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees