GB1252362A - - Google Patents
Info
- Publication number
- GB1252362A GB1252362A GB1271269A GB1252362DA GB1252362A GB 1252362 A GB1252362 A GB 1252362A GB 1271269 A GB1271269 A GB 1271269A GB 1252362D A GB1252362D A GB 1252362DA GB 1252362 A GB1252362 A GB 1252362A
- Authority
- GB
- United Kingdom
- Prior art keywords
- bipolar
- transistor
- circuitry
- input
- separate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017509—Interface arrangements
- H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
- H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1271269 | 1969-03-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1252362A true GB1252362A (enrdf_load_stackoverflow) | 1971-11-03 |
Family
ID=10009734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1271269A Expired GB1252362A (enrdf_load_stackoverflow) | 1969-03-11 | 1969-03-11 |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1252362A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2154086A (en) * | 1983-12-26 | 1985-08-29 | Hitachi Ltd | Semiconductor integrated circuit device with power consumption reducing arrangement |
| EP0093086A3 (fr) * | 1982-04-23 | 1985-10-02 | Centre Electronique Horloger S.A. | Dispositif semiconducteur bipolaire et circuit MOS incorporant un tel dispositif |
-
1969
- 1969-03-11 GB GB1271269A patent/GB1252362A/en not_active Expired
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0093086A3 (fr) * | 1982-04-23 | 1985-10-02 | Centre Electronique Horloger S.A. | Dispositif semiconducteur bipolaire et circuit MOS incorporant un tel dispositif |
| GB2154086A (en) * | 1983-12-26 | 1985-08-29 | Hitachi Ltd | Semiconductor integrated circuit device with power consumption reducing arrangement |
| US5111432A (en) * | 1983-12-26 | 1992-05-05 | Hitachi, Ltd. | Semiconductor integrated circuit device with power consumption reducing arrangement |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |