GB1252362A - - Google Patents

Info

Publication number
GB1252362A
GB1252362A GB1252362DA GB1252362A GB 1252362 A GB1252362 A GB 1252362A GB 1252362D A GB1252362D A GB 1252362DA GB 1252362 A GB1252362 A GB 1252362A
Authority
GB
United Kingdom
Prior art keywords
bipolar
transistor
circuitry
input
separate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1252362A publication Critical patent/GB1252362A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/017509—Interface arrangements
    • H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]

Abstract

1,252,362. Transistor circuits. MARCONI CO. Ltd. 19 Nov., 1969 [11 March, 1969], No. 12712/69. Heading H3T. A M.O.S. transistor M1 and a bipolar transistor T1 are formed on the same silicon chip and the gate and emitter electrodes are together connected to an input terminal, and the collector and drain electrodes are connected to a common resistive load M2 or to separate resistive loads (M21, M22, Fig. 3, not shown), the output being taken from the drain or collector or both. The bipolar transistor T is formed as a four terminal M.O.S.T. in which the substrate electrode is used as the base and the gate electrode is ignored. If separate resistive loads (M21, M22) are used the separate outputs (O/P1, O/P2) are respectively at earth in response to a negative and a positive input signal, so that the circuit can discriminate between positive and negative inputs. The circuit is used as an interface between bipolar and M.O.S.T. circuitry, the output driving M.O.S.T. circuitry and the M.O.S.T. M1 responding to an input from other M.O.S.T. circuitry and the bipolar T1 responding to an input from bipolar circuitry, the polarities of the input signals being usually opposite to select the appropriate transistor M1 or T1.
GB1252362D 1969-03-11 1969-03-11 Expired GB1252362A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1271269 1969-03-11

Publications (1)

Publication Number Publication Date
GB1252362A true GB1252362A (en) 1971-11-03

Family

ID=10009734

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1252362D Expired GB1252362A (en) 1969-03-11 1969-03-11

Country Status (1)

Country Link
GB (1) GB1252362A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0093086A2 (en) * 1982-04-23 1983-11-02 Centre Electronique Horloger S.A. Bipolar semi-conductor device and MOS circuit with such a device
GB2154086A (en) * 1983-12-26 1985-08-29 Hitachi Ltd Semiconductor integrated circuit device with power consumption reducing arrangement

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0093086A2 (en) * 1982-04-23 1983-11-02 Centre Electronique Horloger S.A. Bipolar semi-conductor device and MOS circuit with such a device
EP0093086A3 (en) * 1982-04-23 1985-10-02 Centre Electronique Horloger S.A. Bipolar semi-conductor device and mos circuit with such a device
GB2154086A (en) * 1983-12-26 1985-08-29 Hitachi Ltd Semiconductor integrated circuit device with power consumption reducing arrangement
US5111432A (en) * 1983-12-26 1992-05-05 Hitachi, Ltd. Semiconductor integrated circuit device with power consumption reducing arrangement

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees