GB1243410A - Crystalline materials - Google Patents
Crystalline materialsInfo
- Publication number
- GB1243410A GB1243410A GB3859569A GB3859569A GB1243410A GB 1243410 A GB1243410 A GB 1243410A GB 3859569 A GB3859569 A GB 3859569A GB 3859569 A GB3859569 A GB 3859569A GB 1243410 A GB1243410 A GB 1243410A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transition temperature
- tungsten
- heated
- vanadium
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002178 crystalline material Substances 0.000 title 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 6
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 abstract 6
- 239000000463 material Substances 0.000 abstract 5
- 230000007704 transition Effects 0.000 abstract 4
- 229910052742 iron Inorganic materials 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 3
- 229910052721 tungsten Inorganic materials 0.000 abstract 3
- 239000010937 tungsten Substances 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 abstract 1
- 239000002775 capsule Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000010348 incorporation Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 abstract 1
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
- H01C7/041—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient formed as one or more layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Conductive Materials (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681765941 DE1765941C3 (de) | 1968-08-13 | Material für ein elektrisches Bauelement mit negativer Temperaturcharakteristik |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1243410A true GB1243410A (en) | 1971-08-18 |
Family
ID=5698697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3859569A Expired GB1243410A (en) | 1968-08-13 | 1969-08-01 | Crystalline materials |
Country Status (6)
| Country | Link |
|---|---|
| AT (1) | AT297853B (enrdf_load_stackoverflow) |
| CH (1) | CH498474A (enrdf_load_stackoverflow) |
| FR (1) | FR2015572A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1243410A (enrdf_load_stackoverflow) |
| NL (1) | NL6911781A (enrdf_load_stackoverflow) |
| SE (1) | SE359677B (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4763099A (en) * | 1985-12-04 | 1988-08-09 | Thorn Emi Plc | Temperature sensitive device |
| RU2162057C2 (ru) * | 1994-11-09 | 2001-01-20 | Ле Пантюр Жефко | Микрочастицы диоксида ванадия, способ их получения, в частности для поверхностных покрытий |
| US8102799B2 (en) | 2006-10-16 | 2012-01-24 | Assa Abloy Hospitality, Inc. | Centralized wireless network for multi-room large properties |
| US10001791B2 (en) | 2012-07-27 | 2018-06-19 | Assa Abloy Ab | Setback controls based on out-of-room presence information obtained from mobile devices |
| US10050948B2 (en) | 2012-07-27 | 2018-08-14 | Assa Abloy Ab | Presence-based credential updating |
-
1969
- 1969-08-01 NL NL6911781A patent/NL6911781A/xx unknown
- 1969-08-01 GB GB3859569A patent/GB1243410A/en not_active Expired
- 1969-08-08 FR FR6927370A patent/FR2015572A1/fr not_active Withdrawn
- 1969-08-11 AT AT773969A patent/AT297853B/de not_active IP Right Cessation
- 1969-08-11 CH CH1211369A patent/CH498474A/de not_active IP Right Cessation
- 1969-08-13 SE SE1127869A patent/SE359677B/xx unknown
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4763099A (en) * | 1985-12-04 | 1988-08-09 | Thorn Emi Plc | Temperature sensitive device |
| EP0228808A3 (en) * | 1985-12-04 | 1989-04-19 | Thorn Emi Plc | A temperature sensitive device |
| RU2162057C2 (ru) * | 1994-11-09 | 2001-01-20 | Ле Пантюр Жефко | Микрочастицы диоксида ванадия, способ их получения, в частности для поверхностных покрытий |
| US8102799B2 (en) | 2006-10-16 | 2012-01-24 | Assa Abloy Hospitality, Inc. | Centralized wireless network for multi-room large properties |
| US10001791B2 (en) | 2012-07-27 | 2018-06-19 | Assa Abloy Ab | Setback controls based on out-of-room presence information obtained from mobile devices |
| US10050948B2 (en) | 2012-07-27 | 2018-08-14 | Assa Abloy Ab | Presence-based credential updating |
| US10606290B2 (en) | 2012-07-27 | 2020-03-31 | Assa Abloy Ab | Controlling an operating condition of a thermostat |
Also Published As
| Publication number | Publication date |
|---|---|
| NL6911781A (enrdf_load_stackoverflow) | 1970-02-17 |
| CH498474A (de) | 1970-10-31 |
| SE359677B (enrdf_load_stackoverflow) | 1973-09-03 |
| DE1765941A1 (de) | 1971-10-28 |
| FR2015572A1 (enrdf_load_stackoverflow) | 1970-04-30 |
| DE1765941B2 (de) | 1977-06-08 |
| AT297853B (de) | 1972-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Post et al. | Borides of rare earth metals | |
| Aven et al. | Carrier mobility and shallow impurity states in ZnSe and ZnTe | |
| Belton et al. | The volatilization of molybdenum in the presence of water vapor | |
| Steger et al. | Mössbauer effect study of FeSb2 | |
| Gerard et al. | Fe2+ impurities, isolated and in pairs, in ZnS and CdS studied by the Mössbauer effect | |
| Mănăilă et al. | Structural changes in MgMn2O4 at high temperatures | |
| GB1243410A (en) | Crystalline materials | |
| US3216942A (en) | N-type semiconducting cubic boron nitride | |
| Dutt et al. | Transport properties of lithium and sodium doped nickel oxide | |
| Chaudhury et al. | Dielectric properties of single crystals of MnO and of mixed crystals of MnO/CoO and MnO/NiO | |
| GB1391013A (en) | Process for producing arsenic doped selenium | |
| Vincze et al. | Investigation of Mixed Intermetallic Compounds | |
| Uemura et al. | Electronic Properties of the TI–AgTITe2 System in the Liquid State | |
| Bharati et al. | The electrical properties of Fe2WO6 | |
| US2735824A (en) | Method of manufacturing semi- | |
| US3562188A (en) | Critical temperature resistor devices containing vanadium oxide as a principal constituent and method for preparing the same | |
| Van Diepen et al. | Effect of small variations of the Fe/Cr ratio on the 57 Fe Mössbauer spectra of FeCr2S4 | |
| Blaauw et al. | The metal-nonmetal transition in VO2: a 57Fe Mossbauer study | |
| US3713898A (en) | PROCESS FOR PREPARING HIGH-TRANSITION-TEMPERATURE SUPERCONDUCTORS IN THE Nb-Al-Ge SYSTEM | |
| Cisowski et al. | Influence of pressure on the electrical properties of Cd3− xZnxAs2 solid solutions | |
| US3694274A (en) | High-transition-temperature superconductors in the nb-al-ge system | |
| Sleight | High pressure preparation of Hg2V2O7 | |
| US3417032A (en) | Semiconducting niobate tantalate compositions | |
| Mumme et al. | BiNb3O9, a metastable perovskite phase with Bi/vacancy ordering: Crystal structure and dielectric properties | |
| Pitman et al. | A Study of the Thorium‐Tungsten‐Boron System |