GB1239018A - - Google Patents

Info

Publication number
GB1239018A
GB1239018A GB1239018DA GB1239018A GB 1239018 A GB1239018 A GB 1239018A GB 1239018D A GB1239018D A GB 1239018DA GB 1239018 A GB1239018 A GB 1239018A
Authority
GB
United Kingdom
Prior art keywords
diodes
diode
neuristor
resistor
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1239018A publication Critical patent/GB1239018A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/13—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals
    • H03K5/14—Arrangements having a single output and transforming input signals into pulses delivered at desired time intervals by the use of delay lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

1,239,018. Semi-conductor devices. V. I. STAFEEV. 24 May, 1968, No. 24895/68. Heading H1K. A semi-conductor device comprises a plurality of current-controlled negative resistance diodes formed in a single wafer of high resistivity material, each diode having a single PN junction and the diode junctions being placed by not more than four diffusion lengths. The substrate may be of high resistivity N- type silicon doped with gold or may be a semiinsulator, and the P-type regions may be produced by diffusion. It is stated that the forward parameters of the diodes are determined mainly by the substrate material and not by the quality of the junction. The diodes may be arranged to form a neuristor, a shift register, a delay line, or a memory device. The diodes may be made conductive by injecting carriers, by a magnetic field, or by light or other radiation. In a neuristor device the diodes are arranged with a resistor and a capacitor to form a relaxion circuit, the current flowing in one diode initiating the conduction of the next diode. The capacitors may be formed using a strip of leaky dielectric deposited over the line of diodes. A single long P-type region with a distributed capacitor-resistor may be utilized in place of a series of separate diodes. A double row of diodes may be utilized to form a neuristor.
GB1239018D 1968-05-24 1968-05-24 Expired GB1239018A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB2489568 1968-05-24

Publications (1)

Publication Number Publication Date
GB1239018A true GB1239018A (en) 1971-07-14

Family

ID=10218956

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1239018D Expired GB1239018A (en) 1968-05-24 1968-05-24

Country Status (1)

Country Link
GB (1) GB1239018A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2177254A (en) * 1985-07-05 1987-01-14 Stc Plc Testing integrated circuits
WO1992015109A2 (en) * 1991-02-15 1992-09-03 Niessen Guenther Arrangement of control switching and control device therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2177254A (en) * 1985-07-05 1987-01-14 Stc Plc Testing integrated circuits
WO1992015109A2 (en) * 1991-02-15 1992-09-03 Niessen Guenther Arrangement of control switching and control device therefor
WO1992015109A3 (en) * 1991-02-15 1993-01-07 Guenther Niessen Arrangement of control switching and control device therefor

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees