GB1236828A - Improvements in or relating to field effect transistor circuit arrangements - Google Patents
Improvements in or relating to field effect transistor circuit arrangementsInfo
- Publication number
- GB1236828A GB1236828A GB4423068A GB4423068A GB1236828A GB 1236828 A GB1236828 A GB 1236828A GB 4423068 A GB4423068 A GB 4423068A GB 4423068 A GB4423068 A GB 4423068A GB 1236828 A GB1236828 A GB 1236828A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- source
- fet
- sept
- field effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
- H03G1/007—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using FET type devices
Landscapes
- Amplifiers (AREA)
- Networks Using Active Elements (AREA)
Abstract
1,236,828. Field effect transistor circuits; amplitude modulators. SIEMENS A.G. 18 Sept., 1968 [19 Sept., 1967; 29 Sept., 1967], No. 44230/68. Headings H3R and H3T. The source/drain impedance of an FET is made to vary linearly with gate potential by connecting the substrate of the FET either directly or via an external capacitor to an intermediate point in an A.C. potential divider chain formed between the source and drain electrodes. An external capacitor is connected between the substrate and the gate electrode or separate external capacitors are connected between the substrate and the drain and source, respectively. In Fig. 2 the substrate of the FET 5 is connected to the potential divider comprising resistors 7, 8 and is also A.C. coupled to the gate electrode via capacitor 1. D.C. voltage source 3 controls the impedance R 2 presented by the circuit. In Fig. 5, resistor 8 is replaced by a parallel combination of resistors 17, 15, A.C. voltage source 14 and D.C. voltage 3, which is suitable for a modulator arrangement. The dividers of the previous figures can be capacitive as in Figs. 7, 9 (not shown) and these are suitable for H.F. work. The circuits can be used for gain control by connecting in the feedback paths of amplifiers or converters.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0111871 | 1967-09-19 | ||
| DES0112187 | 1967-09-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1236828A true GB1236828A (en) | 1971-06-23 |
Family
ID=25998818
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4423068A Expired GB1236828A (en) | 1967-09-19 | 1968-09-18 | Improvements in or relating to field effect transistor circuit arrangements |
Country Status (5)
| Country | Link |
|---|---|
| AT (1) | AT298560B (en) |
| BE (1) | BE721074A (en) |
| GB (1) | GB1236828A (en) |
| NL (1) | NL144106B (en) |
| SE (1) | SE355451B (en) |
-
1968
- 1968-09-02 NL NL6812475A patent/NL144106B/en unknown
- 1968-09-17 AT AT09064/68A patent/AT298560B/en not_active IP Right Cessation
- 1968-09-18 SE SE12563/68A patent/SE355451B/xx unknown
- 1968-09-18 GB GB4423068A patent/GB1236828A/en not_active Expired
- 1968-09-19 BE BE721074D patent/BE721074A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL144106B (en) | 1974-11-15 |
| AT298560B (en) | 1972-04-15 |
| BE721074A (en) | 1969-03-19 |
| DE1588767B2 (en) | 1971-09-23 |
| DE1588767A1 (en) | 1970-09-10 |
| NL6812475A (en) | 1969-03-21 |
| SE355451B (en) | 1973-04-16 |
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