GB1222887A - Micro-heating element - Google Patents

Micro-heating element

Info

Publication number
GB1222887A
GB1222887A GB00292/68A GB1029268A GB1222887A GB 1222887 A GB1222887 A GB 1222887A GB 00292/68 A GB00292/68 A GB 00292/68A GB 1029268 A GB1029268 A GB 1029268A GB 1222887 A GB1222887 A GB 1222887A
Authority
GB
United Kingdom
Prior art keywords
crystals
substrate
silicon carbide
silicon
heading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB00292/68A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1222887A publication Critical patent/GB1222887A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/20—Cathodes heated indirectly by an electric current; Cathodes heated by electron or ion bombardment
    • H01J1/22—Heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/13—Solid thermionic cathodes
    • H01J1/15—Cathodes heated directly by an electric current

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Solid Thermionic Cathode (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,222,887. Heading resistances. PHILIPS' ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 4 March, 1968 [7 March, 1967], No. 10292/68. Heading H5H. [Also in Division H1] An indirect cathode heater comprises a filamentary silicon carbide single crystal 1 less than 3 mm. long provided with terminals 2. The filament may be of circular, polygonal, flat or other section. Such crystals may be manufactured by deposition on the silicon carbide walls of a cavity by recrystallization and/or condensation in an inert gas containing lanthanum at temperatures between 2200‹ and 2600‹ C. Alternatively, the crystals may be grown on a substrate from a gas phase containing silicon and carbon by providing local deposits of iron particles on the substrate and heating it to 1200‹ C., during which process silicon and carbon are absorbed from the gas phase by the iron and silicon carbide crystals are deposited on the substrate. Nitrogen is incorporated in the crystals to ensure they have a positive temperature coefficient. For temperatures below 1300‹ C. terminals 2 are joined to crystal 1 with a gold 95%, tantalum 5% alloy. For higher temperatures nickel with 5% molybdenum or 5% tungsten is used as solder. A barium oxide and calcium emitter 5 is mounted on an insulating layer 4 of the heater 1.
GB00292/68A 1967-03-07 1968-03-04 Micro-heating element Expired GB1222887A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6703548A NL6703548A (en) 1967-03-07 1967-03-07

Publications (1)

Publication Number Publication Date
GB1222887A true GB1222887A (en) 1971-02-17

Family

ID=19799479

Family Applications (1)

Application Number Title Priority Date Filing Date
GB00292/68A Expired GB1222887A (en) 1967-03-07 1968-03-04 Micro-heating element

Country Status (7)

Country Link
US (1) US3495120A (en)
CH (1) CH469351A (en)
DE (1) DE1639354A1 (en)
ES (1) ES351239A1 (en)
FR (1) FR1558677A (en)
GB (1) GB1222887A (en)
NL (1) NL6703548A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2404128A (en) * 2003-07-16 2005-01-19 Kanthal Ltd Strip-form silicon carbide heating element
EP3577662B1 (en) * 2017-02-01 2022-08-17 TDK Electronics AG Ptc heater with reduced switch-on current

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5118983A (en) * 1989-03-24 1992-06-02 Mitsubishi Denki Kabushiki Kaisha Thermionic electron source
NL9100327A (en) * 1991-02-25 1992-09-16 Philips Nv CATHODE.
US20200066474A1 (en) * 2018-08-22 2020-02-27 Modern Electron, LLC Cathodes with conformal cathode surfaces, vacuum electronic devices with cathodes with conformal cathode surfaces, and methods of manufacturing the same
CN111243917B (en) * 2020-01-19 2021-12-07 中国科学院电子学研究所 Cathode heater assembly and preparation method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1814759A (en) * 1926-02-10 1931-07-14 Frederick S Mccullough Cathode structure
US3380936A (en) * 1965-10-18 1968-04-30 Matsushita Electric Ind Co Ltd Silicon carbide varistors

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2404128A (en) * 2003-07-16 2005-01-19 Kanthal Ltd Strip-form silicon carbide heating element
GB2404128B (en) * 2003-07-16 2005-08-24 Kanthal Ltd Silicon carbide furnace heating elements
US7759618B2 (en) 2003-07-16 2010-07-20 Sandvik Materials Technology Uk Limited Silicon carbide heating elements
EP3577662B1 (en) * 2017-02-01 2022-08-17 TDK Electronics AG Ptc heater with reduced switch-on current

Also Published As

Publication number Publication date
ES351239A1 (en) 1969-06-01
CH469351A (en) 1969-02-28
DE1639354A1 (en) 1970-06-04
FR1558677A (en) 1969-02-28
US3495120A (en) 1970-02-10
NL6703548A (en) 1968-09-09

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