GB1277568A - Light-transmissive window for an electron tube - Google Patents
Light-transmissive window for an electron tubeInfo
- Publication number
- GB1277568A GB1277568A GB59705/70A GB5970570A GB1277568A GB 1277568 A GB1277568 A GB 1277568A GB 59705/70 A GB59705/70 A GB 59705/70A GB 5970570 A GB5970570 A GB 5970570A GB 1277568 A GB1277568 A GB 1277568A
- Authority
- GB
- United Kingdom
- Prior art keywords
- silicon carbide
- layer
- conductive
- nitrogen
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/18—Luminescent screens
- H01J29/24—Supports for luminescent material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Abstract
1277568 Sealing glass to quartz or silicon carbide; SiC layers PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 16 Dec 1970 [19 Dec 1969] 59705/70 Headings C1A and C1M [Also in Divisions C4 and H1] A conductive layer on the window of a cathode-ray display or pick-up tube comprises silicon carbide made conductive by donor or acceptor substances, this layer forming a substrate for luminescent or photo-conductive material. The window may be entirely of silicon carbide sealed to the envelope by an intermediate part of borosilicate glass, or it may be a layer of silicon carbide on a quartz plate sealed in known manner to the envelope with intermediate glass parts if necessary. In one example silicon carbide obtained by pyrolysis of a methyl-chlorosilane is sintered at 2200‹ C. for one hour in a graphite mould in argon containing less than 1 p.p.m. of nitrogen, and is subsequently heated at 2500‹ C. for 5 hours in a graphite crucible in helium containing less than 0À1 p.p.m. of nitrogen to grow crystals. One surface of a crystal is made conductive by diffusion of aluminium into it to give a resistivity of 0À5 ohm cm., and contacts are provided by melting strips of gold containing 5% tantalum on to the surface. In another example silicon carbide powder is heated at 2600‹ C. in an atmosphere of argon containing 0À01% nitrogen in a graphite crucible; a silicon carbide layer sublimes on to the lid which is at 2400‹ C., and after the carbon is burnt away in an oxygen atmosphere wafers are formed by grinding and sawing the layer. The layer has a resistivity of 1 ohm cm. due to the nitrogen doping and contacts are made by melting an alloy of nickel containing 10% molybdenum on to the wafer. In a further example a graphite plate is heated at 1550‹ C. in a flow of hydrogen containing 1% methylchlorosilane; nitrogen in the gas stream causes the resultant silicon carbide deposit to be conductive and have a resistivity of 200 ohm cm. In a final example a quartz disc is covered with a carbon suspension which is dried and heated to 110‹ C. in hydrogen for 8 hours to form a surface coating of silicon carbide; the disc is heated again in oxygen containing 1% nitrogen to burn away residual carbon and to make the surface conductive. If the tube is a vidicon, a layer of vapour-deposited lead monoxide is provided on the conductive surface, and for a display tube a layer of willemite is deposited on the surface.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6919053A NL6919053A (en) | 1969-12-19 | 1969-12-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1277568A true GB1277568A (en) | 1972-06-14 |
Family
ID=19808670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB59705/70A Expired GB1277568A (en) | 1969-12-19 | 1970-12-16 | Light-transmissive window for an electron tube |
Country Status (5)
Country | Link |
---|---|
US (1) | US3721848A (en) |
DE (1) | DE2058640A1 (en) |
FR (1) | FR2073859A5 (en) |
GB (1) | GB1277568A (en) |
NL (1) | NL6919053A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130074358A1 (en) * | 2011-09-24 | 2013-03-28 | Quantum Technology Holdings Limited | Heated body with high heat transfer rate material and its use |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1380813A (en) * | 1972-10-03 | 1975-01-15 | English Electric Valve Co Ltd | Semiconductor devices |
JPS522277B2 (en) * | 1974-07-10 | 1977-01-20 | ||
US5102012A (en) * | 1990-08-31 | 1992-04-07 | Dayco Products, Inc. | Fuel dispensing system having a flexible hose with a static dissipater and a fuel leak detector |
US5289949A (en) | 1992-06-22 | 1994-03-01 | Chesebrough-Pond's Usa Co., Division Of Conopco, Inc. | Multi-cavity dispensing refill cartridge |
US6350397B1 (en) | 1999-03-10 | 2002-02-26 | Aspen Research Corporation | Optical member with layer having a coating geometry and composition that enhance cleaning properties |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2544755A (en) * | 1948-01-29 | 1951-03-13 | Bell Telephone Labor Inc | Electron camera tube |
NL158606B (en) * | 1951-01-17 | Oerlikon Buehrle Ag | SPRING PROJECTILE. | |
NL290119A (en) * | 1963-03-12 | |||
US3310700A (en) * | 1964-05-28 | 1967-03-21 | Rca Corp | Photoconductive device incorporating stabilizing layers on the face of the selenium layer |
US3505551A (en) * | 1966-10-24 | 1970-04-07 | Gen Electrodynamics Corp | Photoconductive layer having reduced resistivity portions in pattern form |
US3577285A (en) * | 1968-03-28 | 1971-05-04 | Ibm | Method for epitaxially growing silicon carbide onto a crystalline substrate |
US3600645A (en) * | 1969-06-11 | 1971-08-17 | Westinghouse Electric Corp | Silicon carbide semiconductor device |
-
1969
- 1969-12-19 NL NL6919053A patent/NL6919053A/xx unknown
-
1970
- 1970-11-18 US US00090493A patent/US3721848A/en not_active Expired - Lifetime
- 1970-11-28 DE DE19702058640 patent/DE2058640A1/en active Pending
- 1970-12-16 GB GB59705/70A patent/GB1277568A/en not_active Expired
- 1970-12-16 FR FR7045392A patent/FR2073859A5/fr not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130074358A1 (en) * | 2011-09-24 | 2013-03-28 | Quantum Technology Holdings Limited | Heated body with high heat transfer rate material and its use |
Also Published As
Publication number | Publication date |
---|---|
US3721848A (en) | 1973-03-20 |
DE2058640A1 (en) | 1971-06-24 |
FR2073859A5 (en) | 1971-10-01 |
NL6919053A (en) | 1971-06-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
PLNP | Patent lapsed through nonpayment of renewal fees |