GB1219774A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB1219774A
GB1219774A GB5431468A GB5431468A GB1219774A GB 1219774 A GB1219774 A GB 1219774A GB 5431468 A GB5431468 A GB 5431468A GB 5431468 A GB5431468 A GB 5431468A GB 1219774 A GB1219774 A GB 1219774A
Authority
GB
United Kingdom
Prior art keywords
wafer
semi
reinforcing element
conductor
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5431468A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of GB1219774A publication Critical patent/GB1219774A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Abstract

1,219,774. Semi-conductor devices. MITSUBISHI DENKI K.K. 15 Nov., 1968 [15 Nov., 1967; 20 Sept., 1968], No. 54314/68. Heading H1K. A semi-conductor device comprises a flat semi-conductor element wafer having attached to the outer peripheral portion of at least one of its main faces a reinforcing element 30 in the form of a ring or frame composed of material of the same type as that of the wafer or at least a material having the same coefficient of thermal expansion as the material of the wafer. This reinforcing element is joined to the semiconductor wafer by a brazed joint or solder, layers 22, 24, 32 of aluminium having been previously vapour deposited on the surfaces. For a silicon wafer the reinforcing element may be composed of silicon, germanium, molybdenum, tungsten, a cobalt-nickel-iron alloy, alumina or zirconia. The wafer may also be made of germanium, gallium arsenide or any compound of III/V elements. The wafer and element are finally shaped as required by sand blasting and etching, and silicone rubber 34 is disposed around the periphery of the device which is then encased. The device may be a power diode, a thyristor or a transistor.
GB5431468A 1967-11-15 1968-11-15 Semiconductor device Expired GB1219774A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7354167 1967-11-15
JP6813068 1968-09-20

Publications (1)

Publication Number Publication Date
GB1219774A true GB1219774A (en) 1971-01-20

Family

ID=26409361

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5431468A Expired GB1219774A (en) 1967-11-15 1968-11-15 Semiconductor device

Country Status (5)

Country Link
CH (1) CH497790A (en)
DE (1) DE1808666B2 (en)
FR (1) FR1601563A (en)
GB (1) GB1219774A (en)
SE (1) SE352985B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116264B2 (en) * 1971-10-01 1976-05-22
US4745455A (en) * 1986-05-16 1988-05-17 General Electric Company Silicon packages for power semiconductor devices
US4906511A (en) * 1987-02-12 1990-03-06 Kabushiki Kaisha Toshiba Aluminum nitride circuit board
DE3823348A1 (en) * 1988-07-09 1990-02-08 Semikron Elektronik Gmbh High-performance semiconductor component

Also Published As

Publication number Publication date
DE1808666A1 (en) 1970-06-25
DE1808666B2 (en) 1972-07-27
CH497790A (en) 1970-10-15
SE352985B (en) 1973-01-15
FR1601563A (en) 1970-08-31

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