GB1205003A - Improvements relating to semiconductor devices - Google Patents
Improvements relating to semiconductor devicesInfo
- Publication number
- GB1205003A GB1205003A GB148169A GB148169A GB1205003A GB 1205003 A GB1205003 A GB 1205003A GB 148169 A GB148169 A GB 148169A GB 148169 A GB148169 A GB 148169A GB 1205003 A GB1205003 A GB 1205003A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- semi
- edge
- oxide film
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000012535 impurity Substances 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002939 deleterious effect Effects 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- E—FIXED CONSTRUCTIONS
- E01—CONSTRUCTION OF ROADS, RAILWAYS, OR BRIDGES
- E01C—CONSTRUCTION OF, OR SURFACES FOR, ROADS, SPORTS GROUNDS, OR THE LIKE; MACHINES OR AUXILIARY TOOLS FOR CONSTRUCTION OR REPAIR
- E01C11/00—Details of pavings
- E01C11/22—Gutters; Kerbs ; Surface drainage of streets, roads or like traffic areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Architecture (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Thyristors (AREA)
- Bipolar Transistors (AREA)
Abstract
1,205,003. Semi-conductor devices. NIPPON ELECTRIC CO. Ltd. 9 Jan., 1969 [9 Feb., 1968], No. 1481/69. Heading H1K. A method of forming a PN junction 5 in a semi-conductor element. 1 to avoid deleterious effects at the edge of the junction comprises the steps of out-diffusing the impurities from the surface of the semi-conductor element into an oxide film 2 masking the surface, and then diffusing impurities of opposite conductivity type to one another through the mask 2 into the surface of the element to form the PN junction 5 so that the edge 6 of the junction is included within the outdiffused region 4. The semiconductor material is silicon and the oxide film mask 2 is of silicon oxide, the dopants used to form the PN junction being gallium, and phosphorus. In another embodiment, Fig. 4, not shown, the element is formed into a mesa structure, the junction extending completely across the mesa whose peripheral portion has been out-diffused.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP827068A JPS4813987B1 (en) | 1968-02-09 | 1968-02-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1205003A true GB1205003A (en) | 1970-09-09 |
Family
ID=11688456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB148169A Expired GB1205003A (en) | 1968-02-09 | 1969-01-09 | Improvements relating to semiconductor devices |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS4813987B1 (en) |
| DE (1) | DE1905055A1 (en) |
| GB (1) | GB1205003A (en) |
-
1968
- 1968-02-09 JP JP827068A patent/JPS4813987B1/ja active Pending
-
1969
- 1969-01-09 GB GB148169A patent/GB1205003A/en not_active Expired
- 1969-02-01 DE DE19691905055 patent/DE1905055A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4813987B1 (en) | 1973-05-02 |
| DE1905055A1 (en) | 1969-09-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |