GB1203256A - Improvements in and relating to semiconductor devices - Google Patents
Improvements in and relating to semiconductor devicesInfo
- Publication number
- GB1203256A GB1203256A GB4738667A GB4738667A GB1203256A GB 1203256 A GB1203256 A GB 1203256A GB 4738667 A GB4738667 A GB 4738667A GB 4738667 A GB4738667 A GB 4738667A GB 1203256 A GB1203256 A GB 1203256A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layers
- layer
- semi
- screening
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000012216 screening Methods 0.000 abstract 5
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- 230000004888 barrier function Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 2
- 230000005669 field effect Effects 0.000 abstract 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 229910000531 Co alloy Inorganic materials 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910000830 fernico Inorganic materials 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
1,203,256. Semi-conductor device. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 18 Oct., 1967 [21 Oct., 1966], No. 47386/67. Heading H1K. An insulated gate field effect transistor has conductive screening layers 45, 46, at least partly under the portions of a surface insulating layer 2 beneath the metal layers 37, 38 which connect the source and drain zones 34, 35 with their associated external electrical conductors. These screening layers are separated from the subjacent regions of the semi-conductor body by barrier layers and are provided with electrical conductors. Each screen may be in the' form of a surface zone 45, 46, forming a PN junction with the subjacent region, as shown, or may be in the form of a metal layer separated from the semi-conductor body by a barrier layer of insulating material. Highly doped zones 53, 54, of the same conductivity type as the substrate 3 are provided between the screening layers and the source and drain zones to prevent unwanted field effects. The substrate region may be provided with an electrically conducting layer 22. The semi-conductor material used is silicon with silicon oxide as the insulating layer, the dopants used being B 2 O 3 and phosphorus. The metal layers are aluminium and the conducting layer 22 on the substrate is a goldplated iron-nickel-cobalt alloy such as Fernico. When a metal screening layer is used, the associated insulating barrier layer is of silicon oxide or silicon nitride. Two configurations of the device are described, together with examples of circuit configurations showing the various connections of the screening layers.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6614857A NL6614857A (en) | 1966-10-21 | 1966-10-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1203256A true GB1203256A (en) | 1970-08-26 |
Family
ID=19797974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4738667A Expired GB1203256A (en) | 1966-10-21 | 1967-10-18 | Improvements in and relating to semiconductor devices |
Country Status (10)
| Country | Link |
|---|---|
| AT (1) | AT287788B (en) |
| BE (1) | BE705378A (en) |
| BR (1) | BR6793979D0 (en) |
| CH (1) | CH478462A (en) |
| DE (1) | DE1614285A1 (en) |
| ES (1) | ES346214A1 (en) |
| GB (1) | GB1203256A (en) |
| NL (1) | NL6614857A (en) |
| NO (1) | NO120745B (en) |
| SE (1) | SE349895B (en) |
-
1966
- 1966-10-21 NL NL6614857A patent/NL6614857A/xx unknown
-
1967
- 1967-10-07 DE DE19671614285 patent/DE1614285A1/en not_active Withdrawn
- 1967-10-18 SE SE1426967A patent/SE349895B/xx unknown
- 1967-10-18 BR BR19397967A patent/BR6793979D0/en unknown
- 1967-10-18 NO NO17017767A patent/NO120745B/no unknown
- 1967-10-18 GB GB4738667A patent/GB1203256A/en not_active Expired
- 1967-10-18 AT AT940467A patent/AT287788B/en not_active IP Right Cessation
- 1967-10-18 CH CH1455667A patent/CH478462A/en not_active IP Right Cessation
- 1967-10-19 ES ES346214A patent/ES346214A1/en not_active Expired
- 1967-10-19 BE BE705378D patent/BE705378A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| AT287788B (en) | 1971-02-10 |
| BE705378A (en) | 1968-04-19 |
| SE349895B (en) | 1972-10-09 |
| NO120745B (en) | 1970-11-30 |
| DE1614285A1 (en) | 1970-05-21 |
| NL6614857A (en) | 1968-04-22 |
| BR6793979D0 (en) | 1973-01-11 |
| ES346214A1 (en) | 1969-03-16 |
| CH478462A (en) | 1969-09-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |