GB1202790A - Improvements in or relating to the production of thin layers of semiconductor material - Google Patents

Improvements in or relating to the production of thin layers of semiconductor material

Info

Publication number
GB1202790A
GB1202790A GB6102468A GB6102468A GB1202790A GB 1202790 A GB1202790 A GB 1202790A GB 6102468 A GB6102468 A GB 6102468A GB 6102468 A GB6102468 A GB 6102468A GB 1202790 A GB1202790 A GB 1202790A
Authority
GB
United Kingdom
Prior art keywords
recesses
wafer
substrate
conductivity type
face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB6102468A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1202790A publication Critical patent/GB1202790A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)

Abstract

1,202,790. Depositing silicon. SIEMENS A.G. 23 Dec., 1968 [27 Dec., 1967], No. 61024/68. Heading C1A. [Also in Division H1] A semi-conductor layer comprising side-byside zones of different conductivity and/or conductivity type is formed by etching recesses in one face of a semi-conductor wafer of one conductivity type, selectively depositing material of different conductivity or conductivity type to fill the recesses and then disposing the wafer adjacent a monocrystalline substrate and effecting a chemical transport reaction to transfer material from the treated wafer to the substrate. Typically the wafer is of 1 ohm cm. boron-doped silicon with lightly phosphorus or arsenic doped silicon filling the recesses. After filling the recesses the treated face is ground so as to remove any residues of the oxide etching and deposition mask and render it flat but rough. The substrate is placed direct or through the intermediary of a spacer on the roughened face and heated from below to 1200‹ C. in a flow of silicon tetrachloride and hydrogen to transfer the surface material to the substrate substantially unaltered. With recesses of sufficient depth the same wafer may serve to coat several substrates. Spaced source and drain regions are diffused into adjacent N and P zones of the resulting layer and gate insulation and electrodes provided to form complementary IGFET's which can be series connected by vapour deposited tracks to provide a storage cell. It is stated that the technique can also be used to form gallium arsenide devices.
GB6102468A 1967-12-27 1968-12-23 Improvements in or relating to the production of thin layers of semiconductor material Expired GB1202790A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0113509 1967-12-27
DE19671614696 DE1614696A1 (en) 1967-12-27 1967-12-27 Process for producing thin layers, preferably consisting of semiconductor material, for electrical components

Publications (1)

Publication Number Publication Date
GB1202790A true GB1202790A (en) 1970-08-19

Family

ID=25753712

Family Applications (1)

Application Number Title Priority Date Filing Date
GB6102468A Expired GB1202790A (en) 1967-12-27 1968-12-23 Improvements in or relating to the production of thin layers of semiconductor material

Country Status (5)

Country Link
CH (1) CH497794A (en)
DE (1) DE1614696A1 (en)
FR (1) FR1597834A (en)
GB (1) GB1202790A (en)
NL (1) NL6815484A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2103532A1 (en) * 1970-08-26 1972-04-14 Siemens Ag

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2103532A1 (en) * 1970-08-26 1972-04-14 Siemens Ag

Also Published As

Publication number Publication date
FR1597834A (en) 1970-06-29
NL6815484A (en) 1969-07-01
DE1614696A1 (en) 1970-07-02
CH497794A (en) 1970-10-15

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees