GB1202429A - Improvements in and relating to insulated gate field effect transistors - Google Patents

Improvements in and relating to insulated gate field effect transistors

Info

Publication number
GB1202429A
GB1202429A GB5101367A GB5101367A GB1202429A GB 1202429 A GB1202429 A GB 1202429A GB 5101367 A GB5101367 A GB 5101367A GB 5101367 A GB5101367 A GB 5101367A GB 1202429 A GB1202429 A GB 1202429A
Authority
GB
United Kingdom
Prior art keywords
source
layer
bonding pads
drain regions
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5101367A
Inventor
Peter Edward Steigmann
Frank Robert Badcock
David Robert Lamb
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASSOCIATED SEMICONDUCTOR MFT filed Critical ASSOCIATED SEMICONDUCTOR MFT
Priority to GB5101367A priority Critical patent/GB1202429A/en
Priority to CH1658268A priority patent/CH492304A/en
Priority to JP8090268A priority patent/JPS4822392B1/ja
Priority to AT1077168A priority patent/AT297801B/en
Priority to SE1503768A priority patent/SE353187B/xx
Priority to NL6815830A priority patent/NL6815830A/xx
Priority to DE19681807570 priority patent/DE1807570A1/en
Priority to ES359950A priority patent/ES359950A1/en
Priority to BE723665D priority patent/BE723665A/xx
Priority to BR20385568A priority patent/BR6803855D0/en
Priority to FR1591724D priority patent/FR1591724A/fr
Publication of GB1202429A publication Critical patent/GB1202429A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Wire Bonding (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

1,202,429. Semi-conductor devices. ASSOCIATED SEMICONDUCTOR MFRS. Ltd. 9 Nov., 1967, No. 51013/67. Heading H1K. An IGFET is provided with a layer of titanium dioxide on the insulating layer at such an area beyond the gate electrode as to interrupt a path for ion or charge migration between the source and drain electrodes. As shown, Fig. 2, in an enhancement mode IGFET parallel elongate P+ type source and drain regions are produced by diffusing boron into an N-type silicon wafer using an oxide masking technique, a fresh layer of silicon oxide is provided and the source and drain regions exposed, aluminium is deposited over the surface and selectively photo-engraved to leave regions 2 and 3 contacting the source and drain regions with extensions over the oxide to large area bonding pads and an insulated gate electrode 4 extending between the source and drain regions. The whole surface is then covered with a layer of titanium dioxide by vapour phase hydrolysis of titanium tetrachloride or by sputtering, and openings 5, 6, and 7 are etched to expose the bonding pads of the source, drain and gate electrodes, respectively. A plurality of devices may be produced simultaneously in a single wafer which is then subdivided. Wires 8, 9 and 10 are thermo-compression bonded to the exposed bonding pads of the individual devices which are then encapsulated. The titanium dioxide layer may be deposited over the surface of the oxide layer and electrodes after the wires have been attached to the bonding pads, the etching step being unnecessary in this case.
GB5101367A 1967-11-09 1967-11-09 Improvements in and relating to insulated gate field effect transistors Expired GB1202429A (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
GB5101367A GB1202429A (en) 1967-11-09 1967-11-09 Improvements in and relating to insulated gate field effect transistors
CH1658268A CH492304A (en) 1967-11-09 1968-11-06 Semiconductor device comprising a field effect transistor with an insulated gate electrode and method for manufacturing such a device
JP8090268A JPS4822392B1 (en) 1967-11-09 1968-11-06
AT1077168A AT297801B (en) 1967-11-09 1968-11-06 Semiconductor device comprising a field effect transistor with an insulated gate electrode and method for manufacturing such a device
SE1503768A SE353187B (en) 1967-11-09 1968-11-06
NL6815830A NL6815830A (en) 1967-11-09 1968-11-07
DE19681807570 DE1807570A1 (en) 1967-11-09 1968-11-07 Semiconductor device comprising a field effect transistor with an insulated gate electrode and method for manufacturing such a device
ES359950A ES359950A1 (en) 1967-11-09 1968-11-07 Improvements in and relating to insulated gate field effect transistors
BE723665D BE723665A (en) 1967-11-09 1968-11-08
BR20385568A BR6803855D0 (en) 1967-11-09 1968-11-08 PROCESS OF MANUFACTURING A SEMICONDUCTOR DEVICE AND ITS PRODUCT
FR1591724D FR1591724A (en) 1967-11-09 1968-11-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5101367A GB1202429A (en) 1967-11-09 1967-11-09 Improvements in and relating to insulated gate field effect transistors

Publications (1)

Publication Number Publication Date
GB1202429A true GB1202429A (en) 1970-08-19

Family

ID=10458300

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5101367A Expired GB1202429A (en) 1967-11-09 1967-11-09 Improvements in and relating to insulated gate field effect transistors

Country Status (11)

Country Link
JP (1) JPS4822392B1 (en)
AT (1) AT297801B (en)
BE (1) BE723665A (en)
BR (1) BR6803855D0 (en)
CH (1) CH492304A (en)
DE (1) DE1807570A1 (en)
ES (1) ES359950A1 (en)
FR (1) FR1591724A (en)
GB (1) GB1202429A (en)
NL (1) NL6815830A (en)
SE (1) SE353187B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4835585A (en) * 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59174992U (en) * 1983-05-12 1984-11-22 五洋建設株式会社 Intermediate buoy for mooring offshore structures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4835585A (en) * 1984-11-26 1989-05-30 American Telephone And Telegraph Company, At&T Bell Laboratories Trench gate structures

Also Published As

Publication number Publication date
BE723665A (en) 1969-05-08
BR6803855D0 (en) 1973-04-17
ES359950A1 (en) 1970-10-16
JPS4822392B1 (en) 1973-07-05
SE353187B (en) 1973-01-22
NL6815830A (en) 1969-05-13
AT297801B (en) 1972-04-10
CH492304A (en) 1970-06-15
DE1807570A1 (en) 1969-06-26
FR1591724A (en) 1970-05-04

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees