GB1199179A - Overload Protection Circuit for a Transistor Amplifier - Google Patents

Overload Protection Circuit for a Transistor Amplifier

Info

Publication number
GB1199179A
GB1199179A GB4679867A GB4679867A GB1199179A GB 1199179 A GB1199179 A GB 1199179A GB 4679867 A GB4679867 A GB 4679867A GB 4679867 A GB4679867 A GB 4679867A GB 1199179 A GB1199179 A GB 1199179A
Authority
GB
United Kingdom
Prior art keywords
transistor
current
protecting
amplifier
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4679867A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of GB1199179A publication Critical patent/GB1199179A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3069Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output
    • H03F3/3071Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor the emitters of complementary power transistors being connected to the output with asymmetrical driving of the end stage
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/02Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52Circuit arrangements for protecting such amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/42Amplifiers with two or more amplifying elements having their dc paths in series with the load, the control electrode of each element being excited by at least part of the input signal, e.g. so-called totem-pole amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

1,199,179. Protecting transistor circuits. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 13 Oct., 1967 [14 Oct., 1966], No. 46798/67. Heading H3T. A transistor connected in the collector lead of an emitter follower transistor amplifier is saturated at normal current levels but at higher levels operates as a constant current source to prevent overloading. The figure shows a singleended push-pull amplifier comprising two amplifying transistors 11, 21 having their bases connected in parallel to input terminal 2 and their emitters feeding a common load 3. Protecting transistors 16 and 26 are normally saturated but if the amplifier transistor current rises excessively the base and emitter bias rises until the corresponding Zener diode breaks down and clamps the base voltage. Further rise in current brings the protecting transistor out of saturation and it operates as current limiting transistor. Diodes 10 and 20 provide a bias voltage between the bases and if they are similar to the emitter-base diodes and are located close thereto they will provide temperature compensation. Resistor 35 may advantageously be replaced by a constant current transistor.
GB4679867A 1966-10-14 1967-10-13 Overload Protection Circuit for a Transistor Amplifier Expired GB1199179A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1966T0032269 DE1283908B (en) 1966-10-14 1966-10-14 Overload protection circuit for a transistor amplifier in emitter follower circuit

Publications (1)

Publication Number Publication Date
GB1199179A true GB1199179A (en) 1970-07-15

Family

ID=7556927

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4679867A Expired GB1199179A (en) 1966-10-14 1967-10-13 Overload Protection Circuit for a Transistor Amplifier

Country Status (2)

Country Link
DE (1) DE1283908B (en)
GB (1) GB1199179A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT397896B (en) * 1982-08-30 1994-07-25 Rca Licensing Corp HIGH VOLTAGE PROTECTION CIRCUIT FOR A SIGNAL PROCESSING SYSTEM
WO1996008067A1 (en) * 1994-09-03 1996-03-14 Taktai Wong A self-excited oscillator type switch power supply with overcurrent protection

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT397896B (en) * 1982-08-30 1994-07-25 Rca Licensing Corp HIGH VOLTAGE PROTECTION CIRCUIT FOR A SIGNAL PROCESSING SYSTEM
WO1996008067A1 (en) * 1994-09-03 1996-03-14 Taktai Wong A self-excited oscillator type switch power supply with overcurrent protection

Also Published As

Publication number Publication date
DE1283908B (en) 1968-11-28

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed