GB1191367A - Diode Matrix - Google Patents

Diode Matrix

Info

Publication number
GB1191367A
GB1191367A GB3794168A GB3794168A GB1191367A GB 1191367 A GB1191367 A GB 1191367A GB 3794168 A GB3794168 A GB 3794168A GB 3794168 A GB3794168 A GB 3794168A GB 1191367 A GB1191367 A GB 1191367A
Authority
GB
United Kingdom
Prior art keywords
wafer
array
conductors
diodes
strip conductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3794168A
Inventor
Derek Hubert Mash
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB3794168A priority Critical patent/GB1191367A/en
Publication of GB1191367A publication Critical patent/GB1191367A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
    • H03M7/00—Conversion of a code where information is represented by a given sequence or number of digits to a code where the same, similar or subset of information is represented by a different sequence or number of digits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)

Abstract

1,191,367. Semi-conductor devices. STANDARD TELEPHONES CABLES Ltd. 8 Aug., 1968, No. 37941/68. Heading H1K. A matrix of diodes in a wafer 1 of semiconductor material comprises a first array of strip conductors 8, 9, 10 and 11 on one major surface of the wafer, each of these conductors being in uninterrupted ohmic contact with the material, a second array of strip conductors 7 on the other major surface of the wafer, extending across the first array of conductors, and insulated from the semi-conductor material except at those positions where they contact a plurality of individual PN junction diodes 2E, 2G, formed in the wafer by diffusion at those points where the strip conductors of the two arrays cross. The wafer is of silicon, and the second array of strip conductors is insulated from the body where required by a silicon oxide layer 4. Double isolation walls 13 are provided by diffusion to insulate the conductors of the first array from one another. The dopant used for these walls and in the formation of the diodes is boron in the case of an N-type silicon wafer.
GB3794168A 1968-08-08 1968-08-08 Diode Matrix Expired GB1191367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3794168A GB1191367A (en) 1968-08-08 1968-08-08 Diode Matrix

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3794168A GB1191367A (en) 1968-08-08 1968-08-08 Diode Matrix

Publications (1)

Publication Number Publication Date
GB1191367A true GB1191367A (en) 1970-05-13

Family

ID=10400098

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3794168A Expired GB1191367A (en) 1968-08-08 1968-08-08 Diode Matrix

Country Status (1)

Country Link
GB (1) GB1191367A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9658394B2 (en) 2014-06-24 2017-05-23 Corning Incorporated Low attenuation fiber with viscosity matched core and inner clad

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9658394B2 (en) 2014-06-24 2017-05-23 Corning Incorporated Low attenuation fiber with viscosity matched core and inner clad
US10228509B2 (en) 2014-06-24 2019-03-12 Corning Incorporated Low attenuation fiber with viscosity matched core and inner clad

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Legal Events

Date Code Title Description
PS Patent sealed
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PCNP Patent ceased through non-payment of renewal fee