GB1184968A - High Efficiency RF Power Amplification - Google Patents

High Efficiency RF Power Amplification

Info

Publication number
GB1184968A
GB1184968A GB3102168A GB3102168A GB1184968A GB 1184968 A GB1184968 A GB 1184968A GB 3102168 A GB3102168 A GB 3102168A GB 3102168 A GB3102168 A GB 3102168A GB 1184968 A GB1184968 A GB 1184968A
Authority
GB
United Kingdom
Prior art keywords
transistor
output
collector
amplifier
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3102168A
Inventor
Warren B Bruene
Tom L Dennis
Edgar O Schoenike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Collins Radio Co
Original Assignee
Collins Radio Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Collins Radio Co filed Critical Collins Radio Co
Priority to GB3102168A priority Critical patent/GB1184968A/en
Publication of GB1184968A publication Critical patent/GB1184968A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217Class D power amplifiers; Switching amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216Continuous control
    • H03F1/0222Continuous control by using a signal derived from the input signal
    • H03F1/0227Continuous control by using a signal derived from the input signal using supply converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

1,184,968. Transistor amplifying circuits; amplitude modulation; pulse modulation. COLLINS RADIO CO. 28 June, 1968, No. 31021/68. Headings H3R, H3T and H4L. In a high-efficiency RF power amplifier and modulator, " on-off " switching means are provided in the D.C. power supply to control the power supply to an RF amplifier and are driven in accordance with signals from a modulating signal source: a low-pass filter is connected between the switching means and RF amplifier. Audio signals from source 15, Fig. 4, are fed over level-controlling potentiometer 30 to an amplifying transistor 33, the collector of which is coupled to the base of transistor 42 of a pair of transistors 42, 46 which are cross-coupled to form a multivibrator. Pulses which are of constant amplitude but width modulated in accordance with the audio signals appear across resistor 48 and are applied to an emitterfollower output amplifier stage comprising transistors 54, 55. The output from emitter-follower 54, 55 is applied over transformer 59 to the base of transistor 16<SP>1</SP> which forms a switch, its collector-emitter path being connected in the path from D.C. power supply 17 to the collector of RF power amplifying transistor 68. D.C. restoration is applied to the output from transistor 16<SP>1</SP> by means of diode 62 and the D.C. pulses are smoothed to produce an amplitudemodulated collector potential by means of lowpass filter 64, 65, 66. The arrangement is used to economize D.C. power: the audio signal may be derived from an envelope and syllabic filter 24, Fig. 2, coupled to a low power amplifying stage 21 in a radio transmitter, the input to which comprises modulated RF signal and may be of single-side band type. The output from envelope detector 24 is combined with a feedback signal, derived from the output of lowpass filter 18 via feedback regulator 25, in mixer 26, before application to the powersupply switching means 27. In another embodiment, transistors 83, 86, Fig. 6 are crosscoupled to form a free-running multivibrator; the coupling capacitors 88, 89 are given widely different values so that the mark-space ratio of its output is small. The collector-emitter path of a further transistor 76 forms the base circuit resistor of transistor 86: its impedance is varied in accordance with the audio signal from source 15<SP>1</SP> so variably decreasing the space period while maintaining the widths of the pulses constant. Audio signal is applied to the emitter of transistor 76 via Zener diodes 77, 78, switch 79 providing for shorting diode 77 so as to change the basic D.C. modulation level. The output from transistor 86 is applied over amplifier 91 to the base of D.C. switching transistor 16<SP>11</SP> and audio signal is returned by a negative feedback path comprising resistors 74, 75 to the base of transistor 76.
GB3102168A 1968-06-28 1968-06-28 High Efficiency RF Power Amplification Expired GB1184968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB3102168A GB1184968A (en) 1968-06-28 1968-06-28 High Efficiency RF Power Amplification

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB3102168A GB1184968A (en) 1968-06-28 1968-06-28 High Efficiency RF Power Amplification

Publications (1)

Publication Number Publication Date
GB1184968A true GB1184968A (en) 1970-03-18

Family

ID=10316742

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3102168A Expired GB1184968A (en) 1968-06-28 1968-06-28 High Efficiency RF Power Amplification

Country Status (1)

Country Link
GB (1) GB1184968A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2816105A1 (en) * 1978-03-02 1979-09-06 Marconi Co Ltd MODULATION CIRCUIT
FR2768574A1 (en) * 1997-09-15 1999-03-19 Motorola Semiconducteurs Power amplifier circuit for mobile radio communications, which has less energy consumption and is produced by a cost-effective method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2816105A1 (en) * 1978-03-02 1979-09-06 Marconi Co Ltd MODULATION CIRCUIT
FR2768574A1 (en) * 1997-09-15 1999-03-19 Motorola Semiconducteurs Power amplifier circuit for mobile radio communications, which has less energy consumption and is produced by a cost-effective method

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees