GB1176088A - Temperature Compensated Zener Diode. - Google Patents
Temperature Compensated Zener Diode.Info
- Publication number
- GB1176088A GB1176088A GB40946/67A GB4094667A GB1176088A GB 1176088 A GB1176088 A GB 1176088A GB 40946/67 A GB40946/67 A GB 40946/67A GB 4094667 A GB4094667 A GB 4094667A GB 1176088 A GB1176088 A GB 1176088A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zones
- series
- junctions
- substrate
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 abstract 4
- 230000015556 catabolic process Effects 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19661539867 DE1539867C3 (de) | 1966-09-13 | 1966-09-13 | Temperaturkompensierte Z-Diode und Verfahren zu ihrer Herstellung |
| DED0051079 | 1966-09-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1176088A true GB1176088A (en) | 1970-01-01 |
Family
ID=25752810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB40946/67A Expired GB1176088A (en) | 1951-01-28 | 1967-09-07 | Temperature Compensated Zener Diode. |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1549324A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
| GB (1) | GB1176088A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3999205A (en) * | 1975-04-03 | 1976-12-21 | Rca Corporation | Rectifier structure for a semiconductor integrated circuit device |
| US4005471A (en) * | 1975-03-17 | 1977-01-25 | International Business Machines Corporation | Semiconductor resistor having a high value resistance for use in an integrated circuit semiconductor device |
| US4200877A (en) * | 1976-12-23 | 1980-04-29 | Hitachi, Ltd. | Temperature-compensated voltage reference diode with intermediate polycrystalline layer |
| WO2002003473A1 (de) | 2000-07-05 | 2002-01-10 | Robert Bosch Gmbh | Anordnung mit p-dotierten und n-dotierten halbleiterschichten sowie verfahren zu deren herstellung |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT1188398B (it) * | 1986-02-18 | 1988-01-07 | Sgs Microelettronica Spa | Struttura integrata di protezione da scariche elettrostatische e dispositivo a semiconduttore incorporante la stessa |
-
1967
- 1967-09-07 GB GB40946/67A patent/GB1176088A/en not_active Expired
- 1967-09-13 FR FR1549324D patent/FR1549324A/fr not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4005471A (en) * | 1975-03-17 | 1977-01-25 | International Business Machines Corporation | Semiconductor resistor having a high value resistance for use in an integrated circuit semiconductor device |
| US3999205A (en) * | 1975-04-03 | 1976-12-21 | Rca Corporation | Rectifier structure for a semiconductor integrated circuit device |
| US4200877A (en) * | 1976-12-23 | 1980-04-29 | Hitachi, Ltd. | Temperature-compensated voltage reference diode with intermediate polycrystalline layer |
| WO2002003473A1 (de) | 2000-07-05 | 2002-01-10 | Robert Bosch Gmbh | Anordnung mit p-dotierten und n-dotierten halbleiterschichten sowie verfahren zu deren herstellung |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1549324A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1968-12-13 |
| DE1539867B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-05-09 |
| DE1539867A1 (de) | 1970-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1105177A (en) | Improvements in semiconductor devices | |
| GB1294184A (en) | Semiconductor devices and wafers and method of fabricating same | |
| GB1271035A (en) | Processes for forming semiconductor devices and individual semiconductor bodies from a single wafer | |
| GB1012123A (en) | Improvements in or relating to semiconductor devices | |
| GB1357432A (en) | Semiconductor devices | |
| GB1230686A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| GB1003131A (en) | Semiconductor devices and their fabrication | |
| GB1379975A (en) | Methods of manufacturing a semiconductor device comprising a voltagedependant capacitance diode | |
| GB1176088A (en) | Temperature Compensated Zener Diode. | |
| GB1176599A (en) | Improvements relating to semiconductor devices. | |
| GB1352779A (en) | Method of manufacturing semiconductor devices | |
| GB1137388A (en) | Semiconductor device | |
| GB1224801A (en) | Methods of manufacturing semiconductor devices | |
| GB1030048A (en) | Improvements in or relating to processes for producing a semiconductor unit having apn-junction | |
| GB1152156A (en) | Semiconductor Devices | |
| GB995727A (en) | Improvements in or relating to semiconductor devices | |
| GB1228819A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| GB1275213A (en) | Improvements in or relating to the manufacture of semiconductor components | |
| GB911668A (en) | Methods of making semiconductor pn junction devices | |
| GB1407062A (en) | Semiconductor devices | |
| GB1382730A (en) | Manufacture of semiconductor diodes | |
| JPS55120178A (en) | Mis variable capacitance diode with plural electrode structures | |
| GB1520125A (en) | Low-noise barrier injection transit time diode | |
| JPS55120177A (en) | Variable capacitance diode with plural electrode structures | |
| JPS55120174A (en) | P-n junction variable capacitance diode with plural electrode structures |