GB1175404A - Combinations Comprising a Semiconductor Structure and a Voltage Source - Google Patents

Combinations Comprising a Semiconductor Structure and a Voltage Source

Info

Publication number
GB1175404A
GB1175404A GB07609/67A GB1760967A GB1175404A GB 1175404 A GB1175404 A GB 1175404A GB 07609/67 A GB07609/67 A GB 07609/67A GB 1760967 A GB1760967 A GB 1760967A GB 1175404 A GB1175404 A GB 1175404A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
dielectric
field
avalanche
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB07609/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1175404A publication Critical patent/GB1175404A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
    • H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)

Abstract

1,175,404. Semi-conductor devices. THOMSON-C.S.F. 17 April, 1967 [25 April, 1966], No. 17609/67. Heading H1K. A semi-conductor device comprising a series arrangement of a dielectric and a semi-conductor body is biased via electrodes on the dielectric and body. The relationship between the dielectric constants of the layers, the breakdown field of the dielectric and the avalanche field of the semi-conductor is such that the avalanche field is obtained before the dielectric breaks down, and the bias is such that the field in the semi-conductor is near the avalanche field. Suitable semi-conductors are silicon, germanium and gallium arsenide, used in conjunction with the dielectrics barium titanate and tantalum pentoxide. A photodetector of this type is biased so that the avalanche field is exceeded at the insulator-semi-conductor interface and has a transparent electrode on the insulator through which incident photons or alpha particles are received. In an oscillator diode the semi-conductor comprises P, #, and P+ layers with the P layer directly abutting the dielectric.
GB07609/67A 1966-04-25 1967-04-17 Combinations Comprising a Semiconductor Structure and a Voltage Source Expired GB1175404A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR58919A FR1493449A (en) 1966-04-25 1966-04-25 New semiconductor structure

Publications (1)

Publication Number Publication Date
GB1175404A true GB1175404A (en) 1969-12-23

Family

ID=8607004

Family Applications (1)

Application Number Title Priority Date Filing Date
GB07609/67A Expired GB1175404A (en) 1966-04-25 1967-04-17 Combinations Comprising a Semiconductor Structure and a Voltage Source

Country Status (4)

Country Link
DE (1) DE1300179B (en)
FR (1) FR1493449A (en)
GB (1) GB1175404A (en)
NL (1) NL6705547A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0185995A2 (en) * 1984-12-10 1986-07-02 Energy Conversion Devices, Inc. Programmable semiconductor switch for a light influencing display and method of making same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3758797A (en) * 1971-07-07 1973-09-11 Signetics Corp Solid state bistable switching device and method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1736203U (en) * 1955-05-07 1956-12-20 Int Standard Electric Corp ELECTRIC CAPACITOR.
GB884943A (en) * 1959-04-24 1961-12-20 Standard Telephones Cables Ltd Electrical circuit elements
FR1389820A (en) * 1963-03-16 1965-02-19 Matsushita Electric Ind Co Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0185995A2 (en) * 1984-12-10 1986-07-02 Energy Conversion Devices, Inc. Programmable semiconductor switch for a light influencing display and method of making same
EP0185995A3 (en) * 1984-12-10 1986-10-01 Energy Conversion Devices, Inc. Programmable semiconductor switch for a light influencing display and method of making same

Also Published As

Publication number Publication date
DE1300179B (en) 1969-07-31
FR1493449A (en) 1967-09-01
NL6705547A (en) 1967-10-26

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee