GB1172230A - A Method of Manufacturing Semiconductor Device - Google Patents
A Method of Manufacturing Semiconductor DeviceInfo
- Publication number
- GB1172230A GB1172230A GB5456766A GB5456766A GB1172230A GB 1172230 A GB1172230 A GB 1172230A GB 5456766 A GB5456766 A GB 5456766A GB 5456766 A GB5456766 A GB 5456766A GB 1172230 A GB1172230 A GB 1172230A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- substrate
- tungsten
- dec
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000010408 film Substances 0.000 abstract 8
- 229910052751 metal Inorganic materials 0.000 abstract 4
- 239000002184 metal Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 230000004888 barrier function Effects 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 229910052750 molybdenum Inorganic materials 0.000 abstract 2
- 239000011733 molybdenum Substances 0.000 abstract 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052721 tungsten Inorganic materials 0.000 abstract 2
- 239000010937 tungsten Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910003902 SiCl 4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- -1 molybdenum halide Chemical class 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000005979 thermal decomposition reaction Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/909—Controlled atmosphere
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7769165 | 1965-12-16 | ||
| JP7768965 | 1965-12-16 | ||
| JP7769065 | 1965-12-16 | ||
| JP2021066 | 1966-03-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1172230A true GB1172230A (en) | 1969-11-26 |
Family
ID=27457338
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5456766A Expired GB1172230A (en) | 1965-12-16 | 1966-12-06 | A Method of Manufacturing Semiconductor Device |
| GB1188867A Expired GB1173330A (en) | 1965-12-16 | 1967-03-14 | A method for Forming Electrode in Semiconductor Devices |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1188867A Expired GB1173330A (en) | 1965-12-16 | 1967-03-14 | A method for Forming Electrode in Semiconductor Devices |
Country Status (8)
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2196019A (en) * | 1986-10-07 | 1988-04-20 | Cambridge Instr Ltd | Metalorganic chemical vapour deposition |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3675619A (en) * | 1969-02-25 | 1972-07-11 | Monsanto Co | Apparatus for production of epitaxial films |
| US3642526A (en) * | 1969-03-06 | 1972-02-15 | Hitachi Ltd | Semiconductor surface barrier diode of schottky type and method of making same |
| US3664874A (en) * | 1969-12-31 | 1972-05-23 | Nasa | Tungsten contacts on silicon substrates |
| US3754168A (en) * | 1970-03-09 | 1973-08-21 | Texas Instruments Inc | Metal contact and interconnection system for nonhermetic enclosed semiconductor devices |
| DE2025779C3 (de) * | 1970-05-26 | 1980-11-06 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Abscheiden einer Schicht aus einer binären Verbindung an der Oberfläche eines Halbleiterkristalls |
| CH506188A (de) * | 1970-09-02 | 1971-04-15 | Ibm | Feldeffekt-Transistor |
| US3841904A (en) * | 1972-12-11 | 1974-10-15 | Rca Corp | Method of making a metal silicide-silicon schottky barrier |
| JPS5234039B2 (US07943777-20110517-C00090.png) * | 1973-06-04 | 1977-09-01 | ||
| US3857169A (en) * | 1973-06-21 | 1974-12-31 | Univ Southern California | Method of making junction diodes |
| FR2351064A1 (fr) * | 1976-05-12 | 1977-12-09 | France Etat | Procede et equipement d'elaboration de preformes pour fibres optiques |
| US4794019A (en) * | 1980-09-04 | 1988-12-27 | Applied Materials, Inc. | Refractory metal deposition process |
| DE3141567C2 (de) * | 1981-10-20 | 1986-02-06 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von aus Tantal, Wolfram oder Molybdän bestehenden Schichten bei niedrigen Temperaturen und Verwendung dieser Schichten |
| US4871617A (en) * | 1984-04-02 | 1989-10-03 | General Electric Company | Ohmic contacts and interconnects to silicon and method of making same |
| US4584207A (en) * | 1984-09-24 | 1986-04-22 | General Electric Company | Method for nucleating and growing tungsten films |
| GB8620273D0 (en) * | 1986-08-20 | 1986-10-01 | Gen Electric Co Plc | Deposition of thin films |
| US4830982A (en) * | 1986-12-16 | 1989-05-16 | American Telephone And Telegraph Company | Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors |
| US4782034A (en) * | 1987-06-04 | 1988-11-01 | American Telephone And Telegraph Company, At&T Bell Laboratories | Semi-insulating group III-V based compositions doped using bis arene titanium sources |
| EP0437110B1 (en) * | 1990-01-08 | 2001-07-11 | Lsi Logic Corporation | Structure for filtering process gases for use with a chemical vapour deposition chamber |
| US5180432A (en) * | 1990-01-08 | 1993-01-19 | Lsi Logic Corporation | Apparatus for conducting a refractory metal deposition process |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1172923B (de) * | 1958-03-04 | 1964-06-25 | Union Carbide Corp | Verfahren zur Herstellung von Metall-gegenstaenden beliebiger Form durch Aufbringen duenner Lagen von Metallauf eine zu entfernende Formunterlage |
| US2973466A (en) * | 1959-09-09 | 1961-02-28 | Bell Telephone Labor Inc | Semiconductor contact |
| US3072983A (en) * | 1960-05-31 | 1963-01-15 | Brenner Abner | Vapor deposition of tungsten |
| US3188230A (en) * | 1961-03-16 | 1965-06-08 | Alloyd Corp | Vapor deposition process and device |
| US3139658A (en) * | 1961-12-08 | 1964-07-07 | Brenner Abner | Production of tungsten objects |
| US3349297A (en) * | 1964-06-23 | 1967-10-24 | Bell Telephone Labor Inc | Surface barrier semiconductor translating device |
| DE1289188B (de) * | 1964-12-15 | 1969-02-13 | Telefunken Patent | Metallbasistransistor |
| US3406050A (en) * | 1965-08-04 | 1968-10-15 | Texas Instruments Inc | Method of making electrical contact to a semiconductor body |
-
1966
- 1966-12-06 GB GB5456766A patent/GB1172230A/en not_active Expired
- 1966-12-06 US US3519479D patent/US3519479A/en not_active Expired - Lifetime
- 1966-12-15 CH CH1807066A patent/CH456775A/de unknown
- 1966-12-15 BE BE691293D patent/BE691293A/xx unknown
- 1966-12-15 BE BE691295D patent/BE691295A/xx unknown
- 1966-12-15 BE BE691294D patent/BE691294A/xx unknown
- 1966-12-15 NL NL6617676A patent/NL148654B/xx unknown
- 1966-12-15 FR FR87575A patent/FR1505701A/fr not_active Expired
- 1966-12-15 SE SE1720466A patent/SE338763B/xx unknown
- 1966-12-16 FR FR87775A patent/FR1505766A/fr not_active Expired
- 1966-12-16 DE DE19661521396 patent/DE1521396B1/de not_active Withdrawn
- 1966-12-16 FR FR87776A patent/FR1505147A/fr not_active Expired
-
1967
- 1967-03-14 GB GB1188867A patent/GB1173330A/en not_active Expired
- 1967-03-21 US US3480475D patent/US3480475A/en not_active Expired - Lifetime
- 1967-03-23 CH CH420867A patent/CH474855A/de not_active IP Right Cessation
- 1967-03-28 BE BE696172D patent/BE696172A/xx unknown
- 1967-03-28 NL NL6704405A patent/NL149859B/xx not_active IP Right Cessation
- 1967-03-29 DE DE19671614148 patent/DE1614148B2/de active Pending
- 1967-03-29 SE SE426967A patent/SE320434B/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2196019A (en) * | 1986-10-07 | 1988-04-20 | Cambridge Instr Ltd | Metalorganic chemical vapour deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1505766A (fr) | 1967-12-15 |
| DE1614148A1 (de) | 1971-03-25 |
| US3519479A (en) | 1970-07-07 |
| GB1173330A (en) | 1969-12-10 |
| NL149859B (nl) | 1976-06-15 |
| US3480475A (en) | 1969-11-25 |
| NL6617676A (US07943777-20110517-C00090.png) | 1967-06-19 |
| DE1614148B2 (de) | 1971-10-21 |
| NL6704405A (US07943777-20110517-C00090.png) | 1967-10-02 |
| FR1505701A (fr) | 1967-12-15 |
| BE691294A (US07943777-20110517-C00090.png) | 1967-05-16 |
| BE691293A (US07943777-20110517-C00090.png) | 1967-05-16 |
| SE338763B (US07943777-20110517-C00090.png) | 1971-09-20 |
| FR1505147A (fr) | 1967-12-08 |
| CH474855A (de) | 1969-06-30 |
| BE691295A (US07943777-20110517-C00090.png) | 1967-05-16 |
| SE320434B (US07943777-20110517-C00090.png) | 1970-02-09 |
| DE1521396B1 (de) | 1971-12-30 |
| CH456775A (de) | 1968-07-31 |
| BE696172A (US07943777-20110517-C00090.png) | 1967-09-01 |
| NL148654B (nl) | 1976-02-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |