GB1170799A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1170799A
GB1170799A GB23009/67A GB2300967A GB1170799A GB 1170799 A GB1170799 A GB 1170799A GB 23009/67 A GB23009/67 A GB 23009/67A GB 2300967 A GB2300967 A GB 2300967A GB 1170799 A GB1170799 A GB 1170799A
Authority
GB
United Kingdom
Prior art keywords
region
excess
gaas
acceptor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB23009/67A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1170799A publication Critical patent/GB1170799A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
GB23009/67A 1966-07-15 1967-05-18 Semiconductor devices Expired GB1170799A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56544066A 1966-07-15 1966-07-15

Publications (1)

Publication Number Publication Date
GB1170799A true GB1170799A (en) 1969-11-19

Family

ID=24258610

Family Applications (1)

Application Number Title Priority Date Filing Date
GB23009/67A Expired GB1170799A (en) 1966-07-15 1967-05-18 Semiconductor devices

Country Status (8)

Country Link
JP (1) JPS5120873B1 (cg-RX-API-DMAC10.html)
BE (1) BE699987A (cg-RX-API-DMAC10.html)
CH (1) CH490781A (cg-RX-API-DMAC10.html)
DE (1) DE1274232B (cg-RX-API-DMAC10.html)
FR (1) FR1529040A (cg-RX-API-DMAC10.html)
GB (1) GB1170799A (cg-RX-API-DMAC10.html)
NL (1) NL6706639A (cg-RX-API-DMAC10.html)
SE (1) SE316832B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114520270A (zh) * 2020-11-20 2022-05-20 苏州华太电子技术有限公司 一种间接带隙半导体光电探测器件及其制作方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1432697A (en) * 1973-05-04 1976-04-22 Standard Telephones Cables Ltd Optically coupled semiconductive switching devices
JPS62132986U (cg-RX-API-DMAC10.html) * 1986-02-13 1987-08-21

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1052563B (de) * 1957-03-05 1959-03-12 Albrecht Fischer Dipl Phys Anordnung und Herstellungsverfahren fuer Injektions-Elektrolumineszenzlampen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114520270A (zh) * 2020-11-20 2022-05-20 苏州华太电子技术有限公司 一种间接带隙半导体光电探测器件及其制作方法

Also Published As

Publication number Publication date
JPS5120873B1 (cg-RX-API-DMAC10.html) 1976-06-28
SE316832B (cg-RX-API-DMAC10.html) 1969-11-03
NL6706639A (cg-RX-API-DMAC10.html) 1968-01-16
FR1529040A (fr) 1968-06-14
DE1274232B (de) 1968-08-01
CH490781A (de) 1970-05-15
BE699987A (cg-RX-API-DMAC10.html) 1967-11-16

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