GB1170608A - Improvements in or relating to Gunn Effect Semi-Conductor Arrangements - Google Patents

Improvements in or relating to Gunn Effect Semi-Conductor Arrangements

Info

Publication number
GB1170608A
GB1170608A GB24503/69A GB2450369A GB1170608A GB 1170608 A GB1170608 A GB 1170608A GB 24503/69 A GB24503/69 A GB 24503/69A GB 2450369 A GB2450369 A GB 2450369A GB 1170608 A GB1170608 A GB 1170608A
Authority
GB
United Kingdom
Prior art keywords
pulse
gunn effect
control electrode
voltage jump
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB24503/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of GB1170608A publication Critical patent/GB1170608A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00Generation of oscillations using transit-time effects
    • H03B9/12Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses

Landscapes

  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Manipulation Of Pulses (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

1,170,608. Gunn effect pulse multiplier circuits. TELEFUNKEN PATENTVERWERTUNGS-G.m.b.H. 2 Nov., 1966 [15 Dec., 1965], No. 24503/69. Divided out of 1,170,607. Heading H3T. A Gunn effect pulse-multiplying circuit comprises a plurality of Gunn effect elements Pr1, Pr2 . . . connected in parallel with a D.C. bias source U and a common load resistance R1 means for applying a pulse to be multiplied to the first element Prl to initiate or interrupt oscillation in the element and thereby produce a voltage jump as output from the element, means for applying this voltage jump to the second element Pr2 to produce an output voltage jump from the second element ... and so on, the arrangement being such that each pulse applied to the first element produces across the common load resistance R1 a number of pulses corresponding to the number of elements Pr. In the circuit illustrated, each element Pr has an insulated control electrode St1, St2. . ., the pulse to be multiplied being applied to the electrode St1 and the output from each element being applied to the control electrode of the next element through a condenser C and an optional delay device VZ. In a modified circuit each control electrode forms a PN junction with the element.
GB24503/69A 1965-11-06 1966-11-02 Improvements in or relating to Gunn Effect Semi-Conductor Arrangements Expired GB1170608A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DET0029740 1965-11-06
DET0029970 1965-12-09
DET30024A DE1238955B (en) 1965-11-06 1965-12-15 Pulse multiplier circuit
DET30021A DE1258891B (en) 1965-11-06 1965-12-15 Arrangement for pulse delay with a number of semiconductor volume effect elements
DET0030098 1965-12-22

Publications (1)

Publication Number Publication Date
GB1170608A true GB1170608A (en) 1969-11-12

Family

ID=27512318

Family Applications (2)

Application Number Title Priority Date Filing Date
GB24503/69A Expired GB1170608A (en) 1965-11-06 1966-11-02 Improvements in or relating to Gunn Effect Semi-Conductor Arrangements
GB49216/66A Expired GB1170607A (en) 1965-11-06 1966-11-02 Improvements in or relating to Gunn Effect Semi-Conductor Arrangements

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB49216/66A Expired GB1170607A (en) 1965-11-06 1966-11-02 Improvements in or relating to Gunn Effect Semi-Conductor Arrangements

Country Status (3)

Country Link
DE (2) DE1238955B (en)
FR (1) FR1498778A (en)
GB (2) GB1170608A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1205211A (en) * 1966-07-21 1970-09-16 Nat Res Dev Transferred electron oscillators
US3577018A (en) * 1968-03-15 1971-05-04 Nippon Electric Co High-speed logic device employing a gunn-effect element and a semiconductor laser element
US3659158A (en) * 1969-08-25 1972-04-25 Bell Telephone Labor Inc Bulk-effect semiconductor devices and circuits therefor

Also Published As

Publication number Publication date
DE1258891B (en) 1968-01-18
FR1498778A (en) 1967-10-20
DE1238955B (en) 1967-04-20
GB1170607A (en) 1969-11-12

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee